Abstract: A vehicle seatback includes: a first panel; a second panel coupled to the first panel so that a welding stitching pattern is exposed, each welding stitch of the welding stitching pattern accessible from a common direction; and a bracket, wherein at least one welding stitch included in the welding stitch pattern connects the bracket to one of the first or second panels. A vehicle latch system includes: a housing at a first edge of a movable vehicle seatback with a handle to assume an extended position outside the housing in which a flag on the handle is presented, and a retracted position inside the housing in which the flag is not presented; a latch configured for placement at a second edge of the movable vehicle seatback, the second edge opposite the first edge; and a cable connecting the handle and the latch to each other.

Abstract: A vehicle seatback includes: a first panel; a second panel coupled to the first panel so that a welding stitching pattern is exposed, each welding stitch of the welding stitching pattern accessible from a common direction; and a bracket, wherein at least one welding stitch included in the welding stitch pattern connects the bracket to one of the first or second panels. A vehicle latch system includes: a housing at a first edge of a movable vehicle seatback with a handle to assume an extended position outside the housing in which a flag on the handle is presented, and a retracted position inside the housing in which the flag is not presented; a latch configured for placement at a second edge of the movable vehicle seatback, the second edge opposite the first edge; and a cable connecting the handle and the latch to each other.

Abstract: A vehicle seatback includes: a first panel; a second panel coupled to the first panel so that a welding stitching pattern is exposed, each welding stitch of the welding stitching pattern accessible from a common direction; and a bracket, wherein at least one welding stitch included in the welding stitch pattern connects the bracket to one of the first or second panels. A vehicle latch system includes: a housing at a first edge of a movable vehicle seatback with a handle to assume an extended position outside the housing in which a flag on the handle is presented, and a retracted position inside the housing in which the flag is not presented; a latch configured for placement at a second edge of the movable vehicle seatback, the second edge opposite the first edge; and a cable connecting the handle and the latch to each other.

Abstract: A vehicle seatback includes: a first panel; a second panel coupled to the first panel so that a welding stitching pattern is exposed, each welding stitch of the welding stitching pattern accessible from a common direction; and a bracket, wherein at least one welding stitch included in the welding stitch pattern connects the bracket to one of the first or second panels. A vehicle latch system includes: a housing at a first edge of a movable vehicle seatback with a handle to assume an extended position outside the housing in which a flag on the handle is presented, and a retracted position inside the housing in which the flag is not presented; a latch configured for placement at a second edge of the movable vehicle seatback, the second edge opposite the first edge; and a cable connecting the handle and the latch to each other.

Abstract: A method of fabricating a flash memory includes providing a semiconductor substrate with STIs and an active area between two adjacent STIs along a first direction; successively forming a floating-gate insulating layer, a conductive layer, a dielectric layer, a control gate, and a cap layer on the semiconductor substrate; forming spacers on the sidewalls of the cap layer and the control gate; removing the dielectric layer, the conductive layer, and the floating-gate insulating layer not covered by the spacers and the cap layer; performing a selective epitaxial growth process to form an epitaxial layer on the exposed semiconductor substrate in the active area; and forming a source in the epitaxial layer and the semiconductor substrate in the active area.

Abstract: A phase-change memory element. The phase-change memory comprises first and second electrodes. A phase-change material layer is formed between the first and second electrodes. And a carbon-doped oxide dielectric layer is formed to surround the phase-change material layer, wherein the first electrode electrically connects the second electrodes via the phase-change material layer.

Abstract: A method of fabricating an image sensor contains providing a semiconductor substrate with a plurality of pixels defined thereon, forming pixel electrodes on the pixels, and forming a barrier device filled between adjacent pixel electrodes, wherein the barrier device contains a high-k material. Then, a photoconductive layer and a transparent conductive layer are successively formed on the high-k material layer and the pixel electrodes.