Abstract: Various methods and apparatus for joining stacked substrates to a circuit board are disclosed. In one aspect, a method of manufacturing is provided that includes coupling plural substrates to form a stack. At least one of the plural substrates is a semiconductor chip. Plural conductive vias are formed in a first of the plural substrates. Each of the plural conductive vias includes a first end positioned in the first substrate and a second end projecting out of the first substrate.

Abstract: Various methods and apparatus for joining stacked substrates to a circuit board are disclosed. In one aspect, a method of manufacturing is provided that includes coupling plural substrates to form a stack. At least one of the plural substrates is a semiconductor chip. Plural conductive vias are formed in a first of the plural substrates. Each of the plural conductive vias includes a first end positioned in the first substrate and a second end projecting out of the first substrate.

Abstract: Various methods and apparatus for joining stacked substrates to a circuit board are disclosed. In one aspect, a method of manufacturing is provided that includes coupling plural substrates to form a stack. At least one of the plural substrates is a semiconductor chip. Plural conductive vias are formed in a first of the plural substrates. Each of the plural conductive vias includes a first end positioned in the first substrate and a second end projecting out of the first substrate.

Abstract: A method is disclosed for singulating die containing semiconductor device whereby a trench is etched at a first scribe region of a wafer comprising semiconductor devices, and sawing the wafer within the trench.

Abstract: An integrated circuit device includes a degradable test structure, a first external interface pin and a second external interface pin, a first conductive path coupling a first node of the degradable test structure and the first external interface pin, and a second conductive path coupling a second node of the degradable test structure and the second external interface pin. Another integrated circuit device includes a non-volatile memory device, a counter comprising an input configured to receive a first clock signal and an output to provide a count value, and control logic configured to store the count value of the counter in the non-volatile memory, whereby the non-volatile memory is externally accessible.

Abstract: A technique for improving the thermal power dissipation of an integrated circuit includes reducing the thermal resistivity of the integrated circuit by increasing heat transfer in vertical and/or lateral directions. These results are achieved by increasing the surface area of the backside and/or the surface area of the lateral sides of the integrated circuit die. In some embodiments of the invention, an integrated circuit includes circuit elements formed closer to a first surface of a semiconductor substrate than to a second surface of the semiconductor substrate. The semiconductor substrate has a varying profile that substantially increases the surface area of a thermal interface formed on the second surface as compared to the second surface being substantially planar. A maximum depth of the profile is less than the thickness of the semiconductor substrate.

Abstract: A test system configured to detect discontinuities in packaged devices. A test unit includes a pulse generator and a sampling circuit. The packaged device is coupled to the test unit via a test fixture. The test unit is configured to transmit a pulse to the packaged device through the test fixture, receive a reflected signal from the packaged device through the test fixture in response to the transmitted pulse, and analyze the reflected signal to detect a discontinuity within the packaged device and/or determine the location of a discontinuity within the packaged device. The test system is configured to store a calibration dataset which includes a set of sample values corresponding to a time domain reflectometry (TDR) test of a calibration packaged device. The test unit is configured to compare data corresponding to the reflected signal to stored values of the calibration dataset to detect a discontinuity in the packaged device.

Abstract: A mechanism has been developed by which the impact on speed from back end-of-line interconnect layers may be characterized. A method for designing interconnect layers of an integrated circuit includes coupling a capacitive load to a speed sensing circuit to measure a delay corresponding to an interconnect structure of an integrated circuit design, selectively configuring the capacitive load by selectively coupling at least one of a plurality of capacitive structures, the capacitive structures including at least a portion of a plurality of metal layers. The capacitive load is representative of the interconnect structure. The method includes measuring the delay corresponding to the capacitive load to characterize at least one layer of the interconnect structure. In some realizations, the method also includes characterizing the interconnect structure based at least in part on the delay measurement.