Abstract: A design structure which enables e-fuse memory repair. The design structure uses a compressed bit string to generate another bit string based on a select value. The select value provides instructions to an encoding logic element, which generates a second bit string. For example, the select value may instruct the encoding logic to create a duplicate copy of each bit in the compressed bit string to generate a 2n-bit string. Once the fuses are programmed using the second bit string, the fuse values are read out as a third string, which is decoded by a decoding logic element according to the select value, thereby improving memory repair.

Abstract: Integrated circuit memory is tested to discover defective memory elements. To replace the defective memory elements, spare memory elements are selected and a string is generated to indicate which ones of the spares replace which ones of the defective memory elements. The number of bits of the string depend upon how many of the memory elements are defective. Although a certain number of the memory elements are defective, which determines the number of the string bits, nevertheless, a number of fuses to program on the integrated circuit is determined responsive to how many fuses are available for programming relative to the number of the binary string bits. That is, if more fuses are available than a certain threshold number relative to the number of string bits (as is preferred), then more than the threshold number are programmed. If not, then only that certain threshold number of fuses are programmed.