Abstract: A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer.

Abstract: A radiation-emitting semiconductor chip (1) having a semiconductor layer sequence (3) comprising at least one active layer (2) that generates an electromagnetic radiation, and having an electrical contact layer (7) comprising a connection region (4) and a current injection region (5), which is arranged at a distance beside the connection region (4) and is electrically connected. In accordance with a first embodiment, an absorbent brightness setting layer (12) is applied between the connection region (4) and the current injection region (5) and/or, as seen from the connection region (4), outside the current injection region (5) on a front-side radiation coupling-out area (10) of the semiconductor layer sequence (3). The brightness setting layer absorbs in a targeted manner part of a radiation generated in the semiconductor layer sequence (3). In accordance with a second embodiment, a partly insulating brightness setting layer (6) is arranged between the connection region (4) and the active layer (2).