Abstract: A device for use in a micro-electro-mechanical system (MEMS) optical device. The device includes a substrate having opposing first and second sides and a diffusion barrier layer formed over at least the first side. The device further includes a light reflective optical layer formed over the diffusion barrier layer on the first side of the substrate. The second side may desirably have a stress balancing layer located thereover.

Abstract: A device for use in a micro-electro-mechanical system (MEMS) optical device. The device includes a substrate having opposing first and second sides and a diffusion barrier layer formed over at least the first side. The device further includes a light reflective optical layer formed over the diffusion barrier layer on the first side of the substrate. The second side may desirably have a stress balancing layer located thereover.

Abstract: Disclosed is a method for forming a superconductive oxide layer on a substrate. The method comprises applying a precursor solution to a major surface of the substrate such that a metal-containing layer is formed on the surface, and heat treating the substrate/layer combination such that at least a substantial portion of the layer material is transformed into superconductive oxide. Exemplarily, the precursor solution is formed by dissolving Ba--, Y--, and Cu-containing compounds in acetic acid and water, spinning the solution on a MgO substrate, driving of unwanted constituents of the resulting layer at 400.degree. C., heating the combination to about 830.degree. C. in O.sub.2 such that the (perovskite) phase that is associated with superconductivity in YBa.sub.2 Cu.sub.3 O.sub.7 is formed, and oxygenating the layer at about 400.degree. C. in O.sub.2.

Abstract: A process of radiation-induced formation of a uniform metal or metal oxide region suitable for device application or for repairing transparent defects in pattern metal films of lithographic masks has been found. The process requires that the heat evolved during the radiation-induced reactions be carefully limited to produce the desired uniformity.

Abstract: Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.

Abstract: A process of laser-induced metal deposition for repairing transparent defects (18) in patterned metal films (14) of photomasks (10). The process comprises the steps of (a) coating the surface (16) of the substrate (12) having the film (14) thereon with a layer of metal-organic compound (50); (b) exposing the portions of the layer of metal-organic compound (50) overlying the defects (18) to a beam (24) of electromagnetic radiation from a laser (22); (c) ramping the power level of the radiation beam (24) delivered by the laser (22) until a metal patch (52) is reflective and adherent is formed; and (d) removing the unexposed portions of metal-organic compound (50) remaining on the substrate surface (16).