Abstract: Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes: (i) an electron beam (e-beam) source for projecting e-beams at each of a plurality of landing energies on an inspected sample; (ii) an electron sensor for obtaining a measured set of electron intensities pertaining to each of the landing energies; and (iii) processing circuitry for determining a set of structural parameters, which characterizes an internal geometry and/or a composition of the inspected sample, based on the measured set of electron intensities and taking into account reference data indicative of an intended design of the inspected sample.

Abstract: Disclosed herein is a computer-based method for non-destructive depth-profiling of samples. The method includes a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample, which penetrates the sample to a respective depth determined by the landing energy, and (ii) sensing electrons returned from the sample, thereby obtaining a respective sensed electrons data set. The data analysis operation includes generating from the sensed electrons data sets a concentration map, which characterizing at least a vertical dimension of the sample.

Abstract: A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective depth; and (ii) measuring the emitted light to obtain an optical emission data set of the sample. The data analysis operation includes obtaining from the measured optical emission data sets a concentration map quantifying a dependence of a concentration of a material, which the sample comprises, on at least the depth.

Abstract: Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes an electron beam source, a light sensor, and processing circuitry. The electron beam source configured to project e-beams on an inspected sample at each of a plurality of landing energies, which induce X-ray emitting interactions within each of a plurality of probed regions in the inspected sample, respectively, whose depth is determined by the landing energy. The light sensor is configured to measure the emitted X-ray light to obtain optical emission data sets pertaining to each of the probed regions, respectively. The processing circuitry is configured to determine a set of structural parameters, characterizing an internal geometry and/or a composition of the inspected sample, based on the measured optical emission data sets and taking into account reference data indicative of an intended design of the inspected sample.

Abstract: A cleanliness monitor, an evaluation system and a method. The cleanliness monitor may include: a first vacuum chamber, a second vacuum chamber, a molecule collector, a release unit, a mass spectrometer, a manipulator that may be configured to move the molecule collector from the first position to the second position, and an analyzer. The mass spectrometer may have a line of sight to an inner space of the second vacuum chamber. The mass spectrometer may be configured to monitor the inner space of the second vacuum chamber and to generate detection signals that are indicative of a content of the inner space of the second vacuum chamber. A first subset of the detection signals may be indicative of a presence of the at least subset of released organic molecules. The analyzer may be configured to determine, based on the detection signals, the cleanliness of at least one out of (a) the first vacuum chamber, and (b) a tested vacuum chamber. The tested vacuum chamber is fluidly coupled to the first vacuum chamber.

Abstract: A cleanliness monitor for monitoring a cleanliness of a vacuum chamber. The cleanliness monitor may include a mass spectrometer, a molecule aggregation and release unit and an analyzer. The molecule aggregation and release unit is configured to (a) aggregate, during an aggregation period, organic molecules that are present in the vacuum chamber and (b) induce, during a release period, a release of a subset of the organic molecules towards the mass spectrometer. The mass spectrometer is configured to monitor an environment within the vacuum chamber and to generate detection signals indicative of a content of the environment; wherein a first subset of the detection signals is indicative of a presence of the subset of the organic molecules. The analyzer is configured to determine the cleanliness of the vacuum chamber based on the detection signals.

Abstract: A cleanliness monitor for monitoring a cleanliness of a vacuum chamber. The cleanliness monitor may include a mass spectrometer, a molecule aggregation and release unit and an analyzer. The molecule aggregation and release unit is configured to (a) aggregate, during an aggregation period, organic molecules that are present in the vacuum chamber and (b) induce, during a release period, a release of a subset of the organic molecules towards the mass spectrometer. The mass spectrometer is configured to monitor an environment within the vacuum chamber and to generate detection signals indicative of a content of the environment; wherein a first subset of the detection signals is indicative of a presence of the subset of the organic molecules. The analyzer is configured to determine the cleanliness of the vacuum chamber based on the detection signals.

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.