Patents by Inventor Micheal Harley-Stead

Micheal Harley-Stead has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-voltage diodes formed in advanced power integrated circuit devices
    Patent number: 8823051
    Abstract: A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
    Type: Grant
    Filed: May 15, 2006
    Date of Patent: September 2, 2014
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Jun Cai, Micheal Harley-Stead, Jim G. Holt
  • High-voltage diodes formed in advanced power integrated circuit devices
    Publication number: 20070018250
    Abstract: A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
    Type: Application
    Filed: May 15, 2006
    Publication date: January 25, 2007
    Inventors: Jun Cai, Micheal Harley-Stead, Jim Holt
  • HIGH-VOLTAGE DIODES FORMED IN ADVANCED POWER INTEGRATED CIRCUIT DEVICES
    Publication number: 20060118814
    Abstract: A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
    Type: Application
    Filed: December 7, 2004
    Publication date: June 8, 2006
    Inventors: Jun Cai, Micheal Harley-Stead, Jim Holt
  • High-voltage diodes formed in advanced power integrated circuit devices
    Patent number: 7045830
    Abstract: A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
    Type: Grant
    Filed: December 7, 2004
    Date of Patent: May 16, 2006
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Jun Cai, Micheal Harley-Stead, Jim G. Holt