Abstract: A method for forming an electronic device comprising a first transistor and a second transistor, from a stack of layers comprising an isolating layer surmounted on an active layer made of a semi-conductive material, the method comprising at least the following steps: Forming an isolating trench to define, in the active layer, at least one first active region and at least one second active region, said isolating trench protruding with respect to the active layer of the second active region; Forming a masking layer without covering the active layer of the second active region and without covering a portion of the isolating trench; Etching: of a portion of the thickness of the active layer of the second active region, and of at least one portion of the thickness of said portion of the isolating trench.

Abstract: A method for forming an electronic device comprising a first transistor and a second transistor, from a stack of layers comprising an isolating layer surmounted on an active layer made of a semi-conductive material, the method comprising at least the following steps: Forming an isolating trench to define, in the active layer, at least one first active region and at least one second active region, said isolating trench protruding with respect to the active layer of the second active region; Forming a masking layer without covering the active layer of the second active region and without covering a portion of the isolating trench; Etching: of a portion of the thickness of the active layer of the second active region, and of at least one portion of the thickness of said portion of the isolating trench.

Abstract: The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer (2) of metal oxide at the surface of a first layer (1) of nitride of said metal using a plasma of an oxidizing species with an oxidation number that is greater than that of oxygen in order to form a metallic layer (3) of a compound based on said metal; and reducing the metallic layer (3) formed in step i) using a plasma of hydrogen and nitrogen to form a second layer (4) of nitride of said metal.

Abstract: The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer (2) of metal oxide at the surface of a first layer (1) of nitride of said metal using a plasma of an oxidizing species with an oxidation number that is greater than that of oxygen in order to form a metallic layer (3) of a compound based on said metal; and reducing the metallic layer (3) formed in step i) using a plasma of hydrogen and nitrogen to form a second layer (4) of nitride of said metal.