Abstract: The present invention relates to a lithography system for projecting an image or an image pattern on to a target such as a wafer. Energy that is accumulated in the target by the projection of the image or image pattern is removed from said target, such that expansion by local and/or overall heating is limited to a relevant pre-defined value, and wherein such heat removal is realised by the use of a phase transition in a heat absorbing material that is brought into thermal contact with said target. As a further elaboration, such material may be applied in combination with a further material having a superior coefficient of heat transport, and may be incorporated in an emulsion comprising a material having a superior coefficient of heat transfer. Said material may e.g. be adhered to a bottom face of the target, and may also be included in a frame.

Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a radiation system for providing a beam of radiation, a first support structure for supporting a patterning device, a second support structure for supporting a substrate, and a projection system. At least one of the first and second support structures includes a planar base, a movable stage that can be moved over the planar base, and an actuator for moving the stage. The apparatus also includes a contactless position measuring device for measuring a position of the stage, and a first pump for generating a conditioned gas flow in a volume between the measuring device and the stage. The base includes a plurality of gas channels that provide a path for the conditioned gas to flow through the base.