Patents by Inventor Michel DE Brebisson

Michel DE Brebisson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit having complementary bipolar transistors
    Patent number: 4160989
    Abstract: An integrated circuit having one vertical and one lateral bipolar transistor, including a semiconductor substrate, a deposited semiconductor layer, and connection tracks consisting of portions of the semiconductor layer over a dielectric, other portions of the semiconductor layer being used to form contacts for certain active zones of the transistors.
    Type: Grant
    Filed: March 17, 1978
    Date of Patent: July 10, 1979
    Assignee: U.S. Philips Corporation
    Inventors: Michel de Brebisson, Jean-Michel Decrouen, Wolfgang F. J. Edlinger, Jean-Pierre H. Biet
  • Integrated circuit having complementary bipolar transistors
    Patent number: 4148055
    Abstract: An integrated circuit having two vertical complementary bipolar transistors formed from a semiconductor substrate of a first conductivity type, and a deposited layer of second semiconductor type is disclosed. Conductor tracks consisting of portions of the semiconductor layer are supported by a dielectric, while other portions of the semiconductor layer are used for the contacts for certain active zones of the transistors.
    Type: Grant
    Filed: May 19, 1978
    Date of Patent: April 3, 1979
    Assignee: U.S. Philips Corporation
    Inventors: Wolfgang F. J. Edlinger, Michel De Brebisson, Jean-Pierre H. Biet, Jean-Michel Decrouen
  • Manufacture of semiconductor devices in which a doping impurity is diffused from a polycrystalline semiconductor layer into an underlying monocrystalline semiconductor material, and semiconductor devices thus manufactured
    Patent number: 4124934
    Abstract: A method of manufacturing a semiconductor device in which a layer of polycrystalline material having a high impurity concentration is used prior to the diffusion of a thin region having strong surface concentration and prior to providing a contact to the said region.The polycrystalline layer is comparatively thick prior to the diffusion and is reduced in thickness before the metal contact is provided.
    Type: Grant
    Filed: February 1, 1977
    Date of Patent: November 14, 1978
    Assignee: U.S. Philips Corporation
    Inventor: Michel De Brebisson
  • Method of manufacturing transistors by means of ion implantation
    Patent number: 4106954
    Abstract: A method of manufacturing transistors by means of ion implantation is characterized by the implantation of a uniform extrinsic base zone, by providinbg a mask having at least two windows, and by the implantation of the emitter zone and then of the intrinsic active base zone via a first window, after which the implanted zones are annealed.
    Type: Grant
    Filed: February 10, 1977
    Date of Patent: August 15, 1978
    Assignee: U.S. Philips Corporation
    Inventors: Michel de Brebisson, Maurice Bonis
  • Method of manufacturing a semiconductor device
    Patent number: 4009057
    Abstract: A method of manufacturing a semiconductor device, in which on a basic mask of a first material there is provided a layer of a second material, after which the first material with the second material present thereon is removed, and an island of the second material remaining with a window of the basic mask is used as an alignment feature for a subsequent mask.
    Type: Grant
    Filed: July 22, 1975
    Date of Patent: February 22, 1977
    Assignee: U.S. Philips Corporation
    Inventors: Michel DE Brebisson, Alain Gerard Monfret, Jean-Michel Decrouen