Abstract: A method of removal of polymers of the type including bromine, chlorine, silicon, and carbon, present on a semiconductor wafer partly covered with resist, including of rotating the wafer in its plane around its axis, in an enclosure under a controlled atmosphere, at ambient temperature, including the steps of rotating the wafer at a speed included between 500 and 2000 CPM in an enclosure filled with nitrogen; sprinkling the wafer with water, substantially at the center of the wafer; introducing hydrofluoric acid during a determined cleaning time, while maintaining the sprinkling; and rinsing the wafer by continuing the sprinkling to remove any trace of hydrofluoric acid from the wafer, at the end of the cleaning time.

Abstract: The present invention relates to a method of cleaning of a semiconductor wafer covered with silicon oxide, topped with an aluminum layer in which patterns are formed by plasma etching of the aluminum, this etching causing the formation of a polymer containing, in particular, aluminum and carbon on the substantially vertical walls of the patterns, including rotating the wafer in its plane around its axis, in an enclosure under a controlled atmosphere, at ambient temperature, including the following steps rotating the wafer at a speed between 500 and 2000 rpm in an enclosure filled with nitrogen; sprinkling the wafer with water, substantially at the center of the wafer; introducing hydrofluoric acid during a determined cleaning time, while maintaining the sprinkling; and rinsing the wafer by continuing the sprinkling to remove any trace of hydrofluoric acid from the wafer, at the end of the cleaning time.