Abstract: Disclosed is a method including: a) obtaining a substrate extending in a predetermined plane with a first layer parallel to the plane; b) forming a through-hole in the first layer; c) depositing a second layer on the first, the second layer filling the a through-hole to form a bridge of material; d) etching a hairspring in an etching layer made up of the second layer or the substrate, the one of the second layer and the substrate in which the a hairspring is not etched constituting a support, the bridge of material connecting the hairspring to the support perpendicular to the predetermined plane; e) removing the first layer, the hairspring remaining attached to the support by the bridge of material; f) subjecting the hairspring to a thermal treatment; and g) detaching the hairspring from the support.

Abstract: A micromechanical timepiece, and a method for making the same, having a plurality of mutually secured functional sub-assemblies stacked in a direction (Z) to form a multistage assembly, wherein each functional sub-assembly comprises a single semiconductor material and is secured to another sub-assembly via bridges made of the semiconductor material, and in that at least one sub-assembly comprises at least two portions, the portions being movable relative to each other and relative to another sub-assembly to which at least one of the portions is secured via at least one deformable link integrally formed between the portions.

Abstract: A micromechanical timepiece, and a method for making the same, having a plurality of mutually secured functional sub-assemblies stacked in a direction (Z) to form a multistage assembly, wherein each functional sub-assembly comprises a single semiconductor material and is secured to another sub-assembly via bridges made of the semiconductor material, and in that at least one sub-assembly comprises at least two portions, the portions being movable relative to each other and relative to another sub-assembly to which at least one of the portions is secured via at least one deformable link integrally formed between the portions.

Abstract: The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process.

Abstract: Disclosed is a method including: a) obtaining a substrate extending in a predetermined plane with a first layer parallel to the plane; b) forming a through-hole in the first layer; c) depositing a second layer on the first, the second layer filling the a through-hole to form a bridge of material; d) etching a hairspring in an etching layer made up of the second layer or the substrate, the one of the second layer and the substrate in which the a hairspring is not etched constituting a support, the bridge of material connecting the hairspring to the support perpendicular to the predetermined plane; e) removing the first layer, the hairspring remaining attached to the support by the bridge of material; f) subjecting the hairspring to a thermal treatment; and g) detaching the hairspring from the support.

Abstract: The present invention relates to a micromechanical timepiece (1) having a plurality of mutually secured functional sub-assemblies (1a, 1b) stacked in a direction (Z) to form a multistage assembly, characterised in that each functional sub-assembly (1a, 1b) consists of a single semiconductor material and is secured to another sub-assembly (1a, 1b) via bridges (5) made of said semiconductor material, and in that at least one sub-assembly (1a, 1b) comprises at least two portions (2, 3), said portions being movable relative to each other and relative to another sub-assembly (1a, 1b) to which at least one of said portions (2, 3) is secured via at least one deformable link integrally formed between said portions (2, 3). The invention also relates to a method for making such a timepiece.

Abstract: The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process.

Abstract: The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process.

Abstract: A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform.

Abstract: A method and circuit for determining a working temperature of a device, the method comprising: providing a first signal to a device having a temperature-sensitive characteristic; performing a function on the first signal by the device; demodulating a second signal output by the device to obtain a third signal thus generating a signal having reduced 1/f noise component; and based upon the first signal and the second signal, determining a working temperature of the device.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: In one general embodiment, a method is provided for fabricating magnetic structures using post-deposition tilting. A thin film magnetic transducer structure is formed on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted.

Abstract: The present invention is directed to a nanoelectromechanical (NEM) switch comprising two electrodes (12, 18), wherein: at least one (18) of the electrodes comprises an active layer (10) thereon; and at least one (12) of the electrodes is movable along a given direction (z), from a: non-contact position to a contact position where one of the electrodes contacts the other one (18) of the electrodes, at the level of a contact point (P); and the active layer exhibits a conductive pathway (16), which pathway: extends along said given direction (z) to enable electrical conduction from one of the electrodes to the other one of the electrodes in the contact position; and is confined to a given region (R1) of the active layer, the region having nanoscale dimensions in a sectional plane (x, y) perpendicular to the given direction. The present invention is further directed to related devices, systems and methods.

Abstract: A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform.

Abstract: A method and circuit for determining a working temperature of a device, the method comprising: providing a first signal to a device having a temperature-sensitive characteristic; performing a function on the first signal by the device; demodulating a second signal output by the device to obtain a third signal thus generating a signal having reduced 1/f noise component; and based upon the first signal and the second signal, determining a working temperature of the device.

Abstract: The present invention is notably directed to an electromechanical switching device having: two electrodes, including: a first electrode, having layers of a first 2D layered material, which layers exhibit a first surface; and a second electrode, having layers of a second 2D layered material, which layers exhibit a second surface vis-à-vis said first surface; and an actuation mechanism, where: each of the first and second 2D layered materials is electrically conducting; and at least one of said two electrodes is actuatable by the actuation mechanism to modify a distance between the first surface and the second surface, such as to modify an electrical conductivity transverse to each of the first surface and the second surface and thereby enable current modulation between the first electrode and the second electrode.

Abstract: Techniques for producing a flexible structure attached to a device. One embodiment includes the steps of providing a first substrate, providing a second substrate with a releasably attached flexible structure, providing a bonding layer on at least one of the first substrate and the flexible structure, adjoining the first and second substrate such that the flexible structure is attached at the first substrate by means of the bonding layer, and detaching the second substrate in such a way that the flexible structure remains on the first substrate.

Abstract: An improved alignment precision of Micro-Electromechanical Systems (MEMS). A method includes two parts of MEMS separated by at least one rolling element having a first diameter, where the rolling element is maintained on one of the two parts using a thermally dissipative material, horizontally aligning the two parts by pivoting one of the two parts about the rolling element, and locking the two parts together.

Abstract: A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform.