Abstract: A method for programming multilevel PCM cells envisages: forming an amorphous region of amorphous phase change material in a storage element of a PCM cell by applying one or more reset pulse; and forming a conductive path of crystalline phase change material through the amorphous region by applying one or more set pulse, a size of the conductive path defining a programmed state of the PCM cell and an output electrical quantity associated thereto, and being controlled by the value of the reset pulse and set pulse. The step of forming an amorphous region envisages adaptively and iteratively determining, during the programming operations, a value of the reset pulse optimized for electrical and/or physical properties of the PCM cell, and in particular determining a minimum amplitude value of the reset pulse, which allows programming a desired programmed state and a desired value of the output electrical quantity.

Abstract: A phase change memory includes a float buffer which stores the result of a comparison between the current state of data in the phase change memory cells and an intended next state of each of those cells. The float buffer indicates which cells need to be programmed in order to achieve the new states and which cells happen to already be in the new states. Then, after programming of the cells, the float buffer indicates which cells still need to be programmed. Thus, a control stage uses the information in the float buffer to program only those cells whose states need to be changed.

Abstract: A memory device including a memory array comprising a set of phase change memory cells configured to store data. The memory device further includes a protection register including a set of protection cells configured to store protection information of the memory cells. The protection cells of the protection register are memory cells of the memory array.

Abstract: A method for programming multilevel PCM cells envisages: forming an amorphous region of amorphous phase change material in a storage element of a PCM cell by applying one or more reset pulse; and forming a conductive path of crystalline phase change material through the amorphous region by applying one or more set pulse, a size of the conductive path defining a programmed state of the PCM cell and an output electrical quantity associated thereto, and being controlled by the value of the reset pulse and set pulse. The step of forming an amorphous region envisages adaptively and iteratively determining, during the programming operations, a value of the reset pulse optimized for electrical and/or physical properties of the PCM cell, and in particular determining a minimum amplitude value of the reset pulse, which allows programming a desired programmed state and a desired value of the output electrical quantity.

Abstract: A memory device including a memory array comprising a set of phase change memory cells configured to store data. The memory device further includes a protection register including a set of protection cells configured to store protection information of the memory cells. The protection cells of the protection register are memory cells of the memory array.

Abstract: A phase change memory includes a float buffer which stores the result of a comparison between the current state of data in the phase change memory cells and an intended next state of each of those cells. The float buffer indicates which cells need to be programmed in order to achieve the new states and which cells happen to already be in the new states. Then, after programming of the cells, the float buffer indicates which cells still need to be programmed. Thus, a control stage uses the information in the float buffer to program only those cells whose states need to be changed.

Abstract: A phase-change memory device includes a plurality of data PCM cells for storing data bits; data decoding circuits for selectively addressing sets of data PCM cells; and data read/program circuits for reading and programming the selected data PCM cells. The device further includes a plurality of parity PCM cells for storing parity bits associated with data bits stored in the data PCM cells; parity decoding circuits for selectively addressing sets of parity PCM cells; and parity read/program circuits for reading and programming the selected parity PCM cells.

Abstract: The invention provides a method and apparatus for oxygen cutting continuously cast billets, in which a cutting member (8) and a trimming member (9) are positioned relative to the billet to be cut (1) by taking a reference directly on the billet (1) by means of a moving clamp (7), after which the cutting member (8) and the trimming member (9) are lowered parallel to the side faces of the billet so as to cut the billet progressively downwards by attacking one of its side faces horizontally, while simultaneously trimming the cutting bead that forms on the other side face by attacking said other side face continuously in a downward direction.

Abstract: The oxy-cutting torch comprises a support element (10) made from an undeformable block of stainless steel, and a heater element (20) permanently fixed against a bottom face (19) of the support element (10), which heater element is made from a solid block of copper in which passages are formed for gases and cooling fluid, which passages communicate directly with corresponding pipes of the support element (10). At least one nozzle (30) is positioned with precision in two bores (41, 32) in axial alignment provided respectively in the support element (10) and in the heater element (20), the nozzle being connected to a cutting oxygen feed pipe (14.6). A holder element (40) is preferably used to improve the precision with which the nozzle (30) is positioned.

Abstract: The torch fitted with a nozzle (6) comprises a visual observation optical device having one end part coaxially inside the central gas feed pipe (7) and the other end extending outside the body (1) at the opposite end to the nozzle; the optical device being situated a specific distance from the main orifice (17) of the nozzle so that the bounds of its angle of view pass through the edges of said main orifice.

Abstract: A gas torch comprises a body with at a first end adjuster valves for connection to fluid supplies and at a second end a torch tip. At the first end there is a support from which the body extends to the tip. The body is made up of sections of rigid tube articulated and connected to each other by articulation and fluid passage connection devices. These ensure continuity of fluid circulation between the sections of tube. The sections of tube near the support are articulated to the support by articulation and fluid passage connection devices enabling them to be connected to the valves. Maneuvering means are articulated to the supports and to at least the sections of tube near the support so as to enable remote displacement of the tip. The tip is supplied with fluid by some at least of the articulated sections of tube constituting the body.

Abstract: A process for cutting metal members 3 by means of jets of gas emitted by nozzles (a.sub.1, a.sub.2, a.sub.3 . . . a.sub.63) which are disposed at regular spacings on the periphery 2 of the disc 1 which rotates at high speed.Preheating for initiating the cutting is provided by a heating nozzle b.

Abstract: The invention concerns a method of selective crack removal from ingots and slabs, and the torch for carrying out the method.The method comprises burning surface impurities with a jet of oxygen, the strength and shape of which vary continually according to the characteristics of the defect to be removed. The torch for carrying out the method has an oxygen nozzle which is divided into a plurality of parallel pipes, the supply of gas to the pipes being controlled individually.The method allows cracks to be removed economically and rapidly from metallurgical products such as ingots and slabs.