Abstract: A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.

Abstract: A method is provided for obtaining a semi-polar nitride layer obtained from a gallium and nitrogen based material on an upper surface of a crystalline substrate of cubic symmetry, including: etching parallel grooves from the upper surface having two opposed inclined facets, one having a crystalline orientation <111>; forming a mask above the upper surface such that the facets having <111> orientation are not masked; and then forming the layer by epitaxial growth from the non-masked facets, including: a first epitaxial growth phase to form a seed in parallel grooves; interrupting the first phase when the seed has an inclined facet having a crystalline orientation 0001 and an upper facet having a crystalline semi-polar orientation 1011; a surface treatment step including modifying an upper portion of the seed to include silicon; and a second epitaxial growth phase from the inclined facet, continuing until coalescence of seeds of adjacent parallel grooves.

Abstract: A process allowing at least one semipolar layer of nitride to be obtained, which layer is obtained from a least one among gallium, indium and aluminum on a top surface of a single-crystal layer based on silicon, wherein the process comprises the following steps: etching, from the top surface of the single-crystal layer, a plurality of parallel grooves comprising at least two opposite inclined facets, at least one of two opposite facets having a crystal orientation; masking the top surface of the single-crystal layer such that the facets having a crystal orientation are not masked; and epitaxial growth of the semipolar layer of nitride from the not masked facets; wherein the etching is carried out on a stack comprising the single-crystal layer and at least one stop layer that is surmounted by the single-crystal layer and wherein the etching etches the single-crystal layer selectively with respect to the stop layer so that the etching stops on contact with the stop layer.

Abstract: A subject matter of the invention relates to a method for obtaining at least one semi-polar layer (480) of nitride (N) on an upper surface of a crystalline layer (300), the method comprising the steps of: etching parallel grooves (320) starting from the upper surface of the crystalline substrate (300), each groove (320) comprising at least one facet (310) having a crystalline orientation {111}; forming a mask (331) such that the facets (311) opposite to said facets (310) having a crystalline orientation {111} are masked and that said facets (310) having a crystalline orientation {111} are not masked; at least one first epitaxial growth phase, carried out from said non-masked facets (310) in such a way as to form a seed (440); interruption of the first epitaxial growth phase when said seed (440) has an inclined facet (442) having a crystalline orientation (0001) and an upper facet (441) having a crystalline orientation (1011); a surface treatment step comprising a modification of an upper portion of the see

Abstract: A process allowing at least one semipolar layer of nitride to be obtained, which layer is obtained from a least one among gallium, indium and aluminum on a top surface of a single-crystal layer based on silicon, wherein the process comprises the following steps: etching, from the top surface of the single-crystal layer, a plurality of parallel grooves comprising at least two opposite inclined facets, at least one of two opposite facets having a crystal orientation; masking the top surface of the single-crystal layer such that the facets having a crystal orientation are not masked; and epitaxial growth of the semipolar layer of nitride from the not masked facets; wherein the etching is carried out on a stack comprising the single-crystal layer and at least one stop layer that is surmounted by the single-crystal layer and wherein the etching etches the single-crystal layer selectively with respect to the stop layer so that the etching stops on contact with the stop layer.

Abstract: A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.