Patents by Inventor Michel Franciscus Johannes Van Rooy

Michel Franciscus Johannes Van Rooy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8129097
    Abstract: A method of obtaining information related to a defect present in the irradiation of a substrate coated with a layer of radiation sensitive material using immersion lithography is disclosed. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: March 6, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Dirk De Vries, Richard Moerman, Cédric Désiré Grouwstra, Michel Franciscus Johannes Van Rooy
  • Publication number: 20100328636
    Abstract: In order to determine whether an exposure apparatus is projecting patterns correctly, a marker pattern is used on a mask for printing a specific marker structure onto a substrate. This marker is then measured by an inspection apparatus to determine whether there are errors in exposure-related properties such as focus and dose. The projection of the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to the production of side lobe-inducted features of the product structure. The form of the marker structure is more responsive to exposure variation than the form of the product structure to exposure variation. The marker pattern includes both primary features and secondary features that augment the side lobe arising from the primary feature to print side lobe-induced features on either side of a primary marker structure.
    Type: Application
    Filed: June 17, 2010
    Publication date: December 30, 2010
    Applicant: ASML Netherlands B.V.
    Inventors: Johannes Anna Quaedackers, Paul Christiaan Hinnen, Eddy Cornelis Antonius Van Der Heijden, Michel Franciscus Johannes Van Rooy, Christian Marinus Leewis
  • Publication number: 20090170041
    Abstract: A method of obtaining information related to a defect present in the irradiation of a substrate coated with a layer of radiation sensitive material using immersion lithography is disclosed. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material.
    Type: Application
    Filed: December 19, 2008
    Publication date: July 2, 2009
    Applicant: ASML Netherlands B.V.
    Inventors: Dirk De Vries, Richard Moerman, Cedric Desire Grouwstra, Michel Franciscus Johannes Van Rooy
  • Patent number: 7307687
    Abstract: An immersion lithographic apparatus provides an immersion liquid including photosensitive material(s) configured to form a patterned film on the surface of a substrate on exposure to a radiation beam. Irradiation through the immersion liquid onto a substrate leads to deposition of a film on the substrate. Film formation occurs only in the photoirradiated region, so that the film formed has a pattern corresponding to the pattern of the radiation.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: December 11, 2007
    Assignee: ASML Netherlands B.V.
    Inventors: Johannes Anna Quaedackers, Koen Van Ingen Schenau, Patrick Wong, Michel Franciscus Johannes Van Rooy