Patents by Inventor Michel Gaffre

Michel Gaffre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a single crystal of a III-V compound
    Patent number: 4528062
    Abstract: A method of manufacturing a single crystal of a III-V compound by melting a charge of polycrystalline material and progressive crystallization of the molten stoichiometric compound in a closed space.The method is characterized in that on the one hand a certain quantity of the sparingly volatile element of the compound is added to the charge of polycrystalline material, which facilitates the melting of the material and on the other hand the corresponding quantity of the volatile element is added at the point of lower temperature of the space so that the stoichiometric ratios are observed.
    Type: Grant
    Filed: September 30, 1982
    Date of Patent: July 9, 1985
    Assignee: U.S. Philips Corporation
    Inventors: Michel Kleinhans, Michel Gaffre
  • Monolithic electroluminescent semiconductor assembly
    Patent number: 4303931
    Abstract: A monolithic semiconductor assembly is comprised of electroluminescent diodes emitting radiations of different wavelengths. The junctions of the diodes are established in different sectors of a layer of a semiconductor compound where the concentration of a given impurity is different. The various diodes are isolated from one another.
    Type: Grant
    Filed: September 27, 1979
    Date of Patent: December 1, 1981
    Assignee: U.S. Philips Corporation
    Inventor: Michel Gaffre
  • Method of making polychromatic monolithic electroluminescent assembly utilizing epitaxial deposition of graded layers
    Patent number: 4198251
    Abstract: A monolithic assembly comprising electroluminescent diodes emitting radiations of different wavelengths. The junctions of the said diodes are established in different sectors of a layer of a semiconductor compound where the concentration of a given impurity is variable. Also, the manufacture of polychromatic integrated emission devices.
    Type: Grant
    Filed: December 22, 1977
    Date of Patent: April 15, 1980
    Assignee: U.S. Philips Corporation
    Inventor: Michel Gaffre
  • Polychromatic monolithic semiconductor assembly
    Patent number: 4142196
    Abstract: Polychromatic assembly comprising several electroluminescent semiconductor diodes that are formed by diffusion of islands localized in superimposed epitaxial layers, which layers are of different compositions and are deposited on a semiconductor substrate or a semi-insulator, each epitaxial layer having a forbidden bandwidth smaller than that of the layer below which it is present.
    Type: Grant
    Filed: December 19, 1977
    Date of Patent: February 27, 1979
    Assignee: U.S. Philips Corporation
    Inventors: Daniel Diguet, Michel Gaffre