Abstract: A cross tube for a helicopter skid landing gear, including a monolithic metallic tube having a central portion extending transversely between two end portions with longitudinal central axes of the central portion and of the end portions being located in a plane, where the central portion has inner and outer heights, the end portions each have inner and outer heights, and the inner and outer heights of one of the central portion and the end portion are respectively greater than the inner and outer heights of the other of the central portion and the end portion. A skid tube with two portions with cross-sections having one or both of different orientations with respect to one another and different dimensions with respect to one another, and a method of forming a structural tube for a helicopter skid landing gear are also provided.

Abstract: A cross tube for a helicopter skid landing gear, including a monolithic metallic tube having a central portion extending transversely between two end portions with longitudinal central axes of the central portion and of the end portions being located in a plane, where the central portion has inner and outer heights, the end portions each have inner and outer heights, and the inner and outer heights of one of the central portion and the end portion are respectively greater than the inner and outer heights of the other of the central portion and the end portion. A skid tube with two portions with cross-sections having one or both of different orientations with respect to one another and different dimensions with respect to one another, and a method of forming a structural tube for a helicopter skid landing gear are also provided.

Abstract: Improved trailers (e.g., semi-trailers) are disclosed. The trailers may include a floor having a top surface and a bottom surface, where the top surface is adapted to transport a payload, and an elongated shell connected to the bottom surface of the floor, where the elongated shell defines a portion of a substantially closed torsion-resistant chamber of the trailer. The trailers may have a torsion resistance that is substantially higher than conventional trailers of similar size and/or load capacity. The trailers may weigh substantially less than conventional trailers of similar size and/or load capacity. The trailers may realize a bending resistance that is at least equivalent to the bending resistance of conventional trailers of similar size and/or load capacity.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: Improved trailers (e.g., semi-trailers) are disclosed. The trailers may include a floor having a top surface and a bottom surface, where the top surface is adapted to transport a payload, and an elongated shell connected to the bottom surface of the floor, where the elongated shell defines a portion of a substantially closed torsion-resistant chamber of the trailer. The trailers may have a torsion resistance that is substantially higher than conventional trailers of similar size and/or load capacity. The trailers may weigh substantially less than conventional trailers of similar size and/or load capacity. The trailers may realize a bending resistance that is at least equivalent to the bending resistance of conventional trailers of similar size and/or load capacity.

Abstract: The invention concerns an orthosis (1) for preventing and treating hypertrophy (22), keloid, bridle, scar retraction, to improve functional and aesthetic quality and enable scar growth. Said orthosis (2) enables to enhance [sic] the quality of healing, to decrease the number of repair surgical procedures for functional purposes. It provides the patient with more aesthetic movements. Said orthosis is characterized in that it comprises one or more treatment units (2) having a mechanical pressing action (13) on the scar and an activator (3) for enhancing the action of the units (2), for increasing their attachment, for transmitting traction derived from the patient's movements.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: The invention involves a device for closing packages, in particular for single use, of bottle types or packs that can be nested and recycled. The inner membrane sealed capsule permits advances in terms of storage and hygiene. It is of interest to the packaging sectors that contain a product at atmospheric pressure or under pressure, for aerated or sparkling beverages for instances, for varied products such as foods, pharmaceuticals, chemical products, etc.

Abstract: The invention concerns an orthosis (1) for preventing and treating hypertrophy (22), keloid, bridle, scar retraction, to improve functional and aesthetic quality and enable scar growth. Said orthosis (2) enables to enhance [sic] the quality of healing, to decrease the number of repair surgical procedures for functional purposes. It provides the patient with more aesthetic movements. Said orthosis is characterized in that it comprises one or more treatment units (2) having a mechanical pressing action (13) on the scar and an activator (3) for enhancing the action of the units (2), for increasing their attachment, for transmitting traction derived from the patient's movements.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: A semiconductor device includes a heavily doped first layer of a first conductivity type having a bulk portion and a mesa portion disposed above the bulk portion. A second layer of a second conductivity type is deposited on the mesa portion of the first layer to form a p-n junction therewith. The second layer is more lightly doped than the first layer. A contact layer of the second conductivity type is formed on the second layer. First and second electrodes electrically contact the bulk portion of the first layer and the contact layer, respectively.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: A power semiconductor device and a method of forming the same is provided. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material into a portion of the epitaxial layer adjacent to and beneath the bottom of the trench. The dopant is diffused to form a first doped layer in the epitaxial layer and the barrier material is removed from at least the bottom of the trench. The trench is etched through the first doped layer and a filler material is deposited in the trench to substantially fill the trench, thus completing the voltage sustaining region.

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region.

Abstract: A power semiconductor device and a method of forming the same is provided. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material into a portion of the epitaxial layer adjacent to and beneath the bottom of the trench. The dopant is diffused to form a first doped layer in the epitaxial layer and the barrier material is removed from at least the bottom of the trench. The trench is etched through the first doped layer and a filler material is deposited in the trench to substantially fill the trench, thus completing the voltage sustaining region.

Abstract: A power semiconductor device and a method of forming the same is provided. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material into a portion of the epitaxial layer adjacent to and beneath the bottom of the trench. The dopant is diffused to form a first doped layer in the epitaxial layer and the barrier material is removed from at least the bottom of the trench. The trench is etched through the first doped layer and a filler material is deposited in the trench to substantially fill the trench, thus completing the voltage sustaining region.