Patents by Inventor Michel Hehn

Michel Hehn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin-dependent tunnelling cell and method of formation thereof
    Patent number: 7867788
    Abstract: A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: January 11, 2011
    Assignees: Freescale Semiconductor, Inc., Centre National de la Recherché Scientifique (CNRS), STMicroelectronics (Crolles 2) SAS
    Inventors: De Come Buttet, Michel Hehn, Stephane Zoll
  • Magnetoresistive sensor for measuring the strength of a magnetic field
    Patent number: 7602178
    Abstract: A magnetoresistive sensor for measuring the strength of a magnetic filed includes a stack of a reference element, a separation element and an element sensitive to the magnetic field. The reference element and the sensitive element have, respectively, a first and a second magnetic anisotropy in a first and a second direction. The sensitive element includes the superposition of a layer of a ferromagnetic material and a layer of an antiferromagnetic material which are arranged to obtain a magnetic moment having a component oriented in the direction of the field to be measured that varies reversibly in relation to the strength of the magnetic field to be measured, and linearly in an adjustable field range.
    Type: Grant
    Filed: March 10, 2004
    Date of Patent: October 13, 2009
    Assignee: S.N.R. Roulements
    Inventors: Michel Hehn, Alain Schuhl, Grégory Malinowski, Christophe Nicot, Christophe Duret
  • SPIN-DEPENDENT TUNNELLING CELL AND METHOD OF FORMATION THEREOF
    Publication number: 20090243007
    Abstract: A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.
    Type: Application
    Filed: September 20, 2005
    Publication date: October 1, 2009
    Applicant: Freescale Seminconductor, Inc.
    Inventors: De Come Buttet, Michel Hehn, Stephane Zoll
  • Magnetoresistive sensor, comprising a ferromagnetic/antiferromagnetic sensitive element
    Publication number: 20070159164
    Abstract: The invention concerns a magnetoresistive magnetic field sensor comprising a stack (1) of a reference element (2), a separation element (3) and an element (4) sensitive to the magnetic field, in which the reference element (2) and the sensitive element (4) have respectively a first and a second magnetic anisotropy (5, 6) in a first and a second direction. The sensitive element (4) comprises the superposition of a layer of a ferromagnetic material (FM1) and a layer of an antiferromagnetic material (AF1) which is arranged in order to obtain a magnetic moment (10) whose component oriented in the direction of the field to be measured varies reversibly in relation to the strength of the magnetic field to be measured, and linearly in an adjustable field range. The invention also concerns a use of such a sensor.
    Type: Application
    Filed: March 10, 2004
    Publication date: July 12, 2007
    Inventors: Michel Hehn, Alain Schuhl, Gregory Malinowski, Christophe Nicot, Christophe Duret