Abstract: A method producing a refractive or diffractive optical device, including: production, in a first layer, of at least one inclined general profile approximated by a staircase profile including plural stairsteps; production of the profile including: forming buffer patterns on the first layer and at least one sequence including: forming masking patterns, so each masking pattern includes at least one edge situated above a buffer pattern and covers at least one area of the first layer not masked by the buffer patterns, the forming the masking patterns also defining, for the first layer, plural free areas not masked by the masking patterns or by the buffer patterns; etching the free areas to form trenches in the first layer. The production of the profile also includes: removing the masking patterns, removing the buffer patterns revealing walls previously covered by the buffer patterns, and then an isotropic etching to remove the walls.

Abstract: A connecting system having a female element including a hollow flared part for receiving and guiding a male element and a hollow mating part for mating with the male element. A part to be mated of the male element has an outside diameter that before the mating is larger than an inside diameter of the mating part of the female element, and the part to be mated of the male element is made of a material that can be strained and has a corrugated transverse cross section, so as to contract when it is plugged into the mating part of the female element, and/or the mating part of the female connection element is made of a material that can be strained and has a corrugated transverse cross section, so as to dilate when the part to be mated of the male element is plugged into it.

Abstract: A method producing a refractive or diffractive optical device, including: production, in a first layer, of at least one inclined general profile approximated by a staircase profile including plural stairsteps; production of the profile including: forming buffer patterns on the first layer and at least one sequence including: forming masking patterns, so each masking pattern includes at least one edge situated above a buffer pattern and covers at least one area of the first layer not masked by the buffer patterns, the forming the masking patterns also defining, for the first layer, plural free areas not masked by the masking patterns or by the buffer patterns; etching the free areas to form trenches in the first layer. The production of the profile also includes: removing the masking patterns, removing the buffer patterns revealing walls previously covered by the buffer patterns, and then an isotropic etching to remove the walls.

Abstract: A connecting system having a female element including a hollow flared part for receiving and guiding a male element and a hollow mating part for mating with the male element. A part to be mated of the male element has an outside diameter that before the mating is larger than an inside diameter of the mating part of the female element, and the part to be mated of the male element is made of a material that can be strained and has a corrugated transverse cross section, so as to contract when it is plugged into the mating part of the female element, and/or the mating part of the female connection element is made of a material that can be strained and has a corrugated transverse cross section, so as to dilate when the part to be mated of the male element is plugged into it.

Abstract: A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: The invention relates to a method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: The invention concerns a method for producing a biomimetic membrane, a biomimetic membrane and the applications of said membrane.

Abstract: Process for producing an integrated circuit stage formed from a dielectric layer (1) covering interconnection lines (5) and connection points (4), which connect the said lines (5) to conductive parts (6) on the opposite side of the dielectric layer (1). The process consists of forming all the dielectric layer (1) during a single step and then successively etching cavities at the locations of the connection points and the interconnection lines by means of two successively positioned masks and then filling the cavities in a single step with conductive material in order to simultaneously form connection points (4) and interconnection lines (5).

Abstract: The invention provides a process for mounting an ultra-high frequency diode so as to form a pre-matched module.The module of the invention comprises a copper base, a quartz ring and a copper cover: these three parts, coated with gold at least on their facing faces, are assembled together by thermocompression. Inside this case, the diode chip, soldered to the base via a gold heat sink is biased by a false "beam-lead" connection, a metal star whose arms are curved, which reduces the inductance and capacity of this connection with respect to the base. The false "beam-lead" is formed by metalizing a mesa obtained on a silicon wafer.

Abstract: An a MIS integrated circuit, such as an EPROM memory cell integrated onto a semiconductor substrate comprises (a) memory points which are insulated from one another and have in each case a stack of materials formed from a first insulant in contact with the substrate, first and second gates separated from one another by a second insulant, the first gate being in contact with the first insulant, a source and a drain formed in the substrate on either side of the stack of gates, and a channel, whose length is oriented according to a first direction Y, (b) first metal lines parallel to the first direction for applying electric signals to said stacks and (c) second conductor lines parallel to a second direction X perpendicular to the first direction and produced on the drains for applying electric signals to said drains. A process for making the circuit is also disclosed.

Abstract: A millimetric electromagnetic waves switch is constituted by a ridged waveguide associated to a PIN diode of which the layers P.sup.+ and N.sup.+ are very thin, of about 2 to 5 microns thickness. The width of the diode is inferior to that of the ridged part of the guide and its dimension according to the longitudinal axis of the guide is a multiple of the half-length of the guided wave.

Abstract: A high-power limiter comprising silicon PIN diodes for millimeter waves is formed by a waveguide associated with a silicon substrate wherein is formed a matrix of PIN diodes. The PIN diodes are formed throughout the thickness of the silicon substrate.

Abstract: A pre-matched module is provided for an ultra-high frequency diode with high heat dissipation, comprising a diode chip biassed by a connection and mounted inside a case formed by a metal base, a quartz ring and a metal cap. The base of the case comprises two fixed and metal-coated diamonds one of which has dimensions very much greater than those of the other central diamond, these two diamonds allowing the heat released by the diode to be removed to a maximum and allowing the cap to provide, because of its dimensions and those of the diamond and of the ring, good radial impedance transformation.

Abstract: In a method of fabrication of a module formed by a semiconductor diode which oscillates in millimeter waves and by a variable-capacitance diode, the oscillating diode is mounted on a pedestal at the center of a support base. A ring of fused silica for supporting a metallic disk of predetermined diameter serves to form a radial space between two metallic surfaces with a view to readily obtaining oscillation in a predetermined frequency band. A similar ring is welded at one end to the opposite face of the disk and at the other end to another metallic base fitted with a central variable-capacitance diode. Flexible connections bonded to the diodes are clamped between the rings and the disk. The module may be incorporated in a tunable oscillator.

Abstract: The impedance value of the semiconductor device usable at very high frequencies is preset during manufacture.The device comprises a Gunn or Zener diode coupled to a coaxial line. The central conductor of the line is constituted by a metal wire mandrel or a metal coating deposited on a glass fibre section.The outer cylinderical conductor is a cylindrical metal coating deposited on a ring of dielectric material, such as glass and which surrounds the diode.Application to microstrip, transmitting antenna and radial cavity circuits.