Abstract: Described is equipment for depositing materials by evaporation using a molecular beam and equipment for fabricating semiconductor wafers, including a central conveyor module having a plurality of lateral ports capable of functioning under vacuum pressure conditions above 10?8 Torr. The semiconductor wafer fabrication equipment includes a loader module and one or more substrate treatment modules functioning under vacuum pressure conditions above 10?8 Torr, each treatment module being connected to one of the ports of the central conveyor module. The fabrication equipment includes at least one module for depositing materials by evaporation using a molecular beam operating under vacuum pressure conditions below 10?8 Torr, the molecular beam deposition module being connected to one of the ports of the central conveyor module and being capable of receiving the substrate in order to deposit a layer of materials on its face to be treated.

Abstract: An ultra high frequency circuit formed on an insulating plate having first and second surfaces on opposite sides and having at least one hole formed through the plate and defined by a side wall connecting the surfaces. The side wall is covered by a deposition including overlapping layers of gold and gold-platinum for connecting, respectively, a gold connection track on the one surface with a silver alloy conductive layer. The overlapping gold/gold-platinum layers provide metallurgically-stable interfaces with the gold connection track and the silver alloy conductive layer. This prevents a metallurgically unstable condition which would exist if the gold connection track were directly connected to the silver alloy conductive layer. .