Abstract: The invention relates to a device and a process for acquiring bichromatic bar codes, with a two-dimensional sensor with electronic scanning. The height Hy of the scanned portion is modified between at least two successive scanning operations. Thus, the device is or may be adapted to the type and/or to characteristics not known in advance of the code to be read.

Abstract: The invention relates to a device and a process for acquiring bichromatic bar codes, with a two-dimensional sensor with electronic scanning. The height Hy of the scanned portion is modified between at least two successive scanning operations. Thus, the device is or may be adapted to the type and/or to characteristics not known in advance of the code to be read.

Abstract: While performing plasma-enhanced chemical vapor deposition on a substrate by exposing the substrate in a vacuum to a flow of particles generated by a plasma, which particles react to form a passivation layer on the substrate, a grid is interposed between the plasma and the substrate, thereby reducing the flow of charged particles towards the substrate while conserving a flow of neutral particles. The grid is formed of metal wires that are crossed at a pitch that is less than two or three times the Debye length (?D) of the plasma used, at least at the beginning of deposition. The aging properties of semiconductor components made by such a method is thereby improved.

Abstract: The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising: a process chamber (1) in which said substrate (2) is processed, means for generating a plasma (6); at least one first window (7) formed in a first wall (8) of said chamber (1) facing the surface (2a) to be etched of said substrate (2); at least one second window (10) formed in a second wall (11) of said chamber (1) lying in a plane different from said first wall (8); first means (18) coupled to said second window (10) to detect a light signal (17) relating to a selected wavelength emitted by said plasma (6); means (13, 15) for emitting a monochromatic light signal (14) through said first window (7) towards said surface (2a) in a direction (9) substantially perpendicular to said surface (2a) in such a manner that said incident signal (14a) is reflected on said surface (2a); second means (16) for detecting said reflected signal (1

Abstract: A process for detection of straight-line segments in a stream of digital data that are representative of an image (m, n) in which the contour points of said image each defined by the modulus and the orientation ? of their gradient in relation to a horizontal axis are identified. The stream of digital data is stored in the form of two successive lines, each of n points P(i, j), for each of the lines the n points of said line are extracted successively, and for each point Pc(i, j) extracted, the so-called current point, the three points having inferior coordinates Pa(i?l, j?l), Pb(i, j?l), Pd(i?l, j) directly neighbouring said current point are extracted, successively the value of the orientation of the current point Pc is compared with that of the neighbouring points Pa, Pb and Pd. The values of the orientations of the points Pb and Pd are compared, the result of a comparison is validated if the points are contour points and if the values of their orientation are close.

Abstract: A device for fabricating a mask by plasma etching a semiconductor substrate comprises a semiconductor substrate part of the area whereof is partially covered by a mask for protecting at least one area that must not be etched and for exposing at least one area including a pattern to be etched, a support for the substrate and means for generating a plasma in the form of a flow of ions toward the substrate. According to the invention the device further comprises means for confining the ions, including a conductive material screen disposed over the substrate and along the limit between the pattern area to be etched and the area not to be etched.

Abstract: Apparatus for establishing and controlling a low pressure gas mixture in a vacuum enclosure (8) comprises at least one secondary pump (9) of the molecular, turbomolecular, or hybrid type, followed by at least one primary pump (10), with first control and adjustment means (22) such as a regulation valve (24) for controlling and adjusting the total gas pressure of the mixture of gases in the vacuum enclosure (8) as a function of a total pressure setpoint (27). The apparatus further comprises second control and adjustment means (28) such as a second regulation valve (29a) downstream from the secondary pump (9). The second regulation valve (29a) is controlled as a function of a delivery pressure setpoint (32) to modify the delivery pressure of the secondary pump (9) and thus to adapt its pumping capacity in selective manner.

Abstract: According to the invention, while performing plasma-enhanced chemical vapor deposition on a substrate by exposing the substrate in a vacuum to a flow of particles generated by a plasma, which particles react to form a passivation layer on the substrate, a grid is interposed between the plasma and the substrate, thereby reducing the flow of charged particles towards the substrate while conserving a flow of neutral particles. The grid is formed of metal wires that are crossed at a pitch that is less than two or three times the Debye length (?D) of the plasma used, at least at the beginning of deposition. The aging properties of semiconductor components made by such a method is thereby improved.

Abstract: A process for detection of straight-line segments in a stream of digital data that are representative of an image (m, n) in which the contour points of said image each defined by the modulus and the orientation ? of their gradient in relation to a horizontal axis are identified. The stream of digital data is stored in the form of two successive lines, each of n points P(i, j), for each of the lines the n points of said line are extracted successively, and for each point Pc(i, j) extracted, the so-called current point, the three points having inferior coordinates Pa(i?1, j?1), Pb(i, j?1), Pd(i?1, j) directly neighboring said current point are extracted, successively the value of the orientation of the current point Pc is compared with that of the neighboring points Pa, Pb and Pd. The values of the orientations of the points Pb and Pd are compared, the result of a comparison is validated if the points are contour points and if the values of their orientation are close.

Abstract: According to the invention, etching is performed in a reaction chamber (1) by subjecting a substrate (16) biased by a bias generator (15) to a plasma generated by a plasma source (4) contained in a leakproof wall (5) of dielectric material surrounded by an inductive coupled antenna (6) powered by a radiofrequency generator (7). Control means (13) control solenoid valves (12a, 12b, 12c) and the radiofrequency generator (7) so as to produce a prior step of establishing the plasma excitation power progressively, during which step an inert gas such as argon or nitrogen is injected into the reaction chamber (1), and the power delivered by the radiofrequency generator (7) is raised progressively until it reaches a nominal power. This avoids applying thermal shock to the leakproof wall (5) of dielectric material that might otherwise destroy the wall, thus making it possible to plasma excitation powers that are greater than 3000 W.

Abstract: A device for supporting a semiconductor substrate device comprises a sample-holder attached to a treatment chamber including a cooling system and electrical connection means. The device further comprises an intermediate element fixed to the sample-holder by electrostatic means or by means of clamps and electrically and thermally connected to the sample-holder. The intermediate element is removable, has sufficient stiffness to allow manipulation of a thinned substrate that it supports and includes a base consisting of a first material having a higher conductivity than the substrate. A first layer covering the base consists of a second material having a high dielectric strength. First and second electrodes are disposed on the first layer. A second layer covering the first layer and the electrodes consists of a third material having a high dielectric strength.

Abstract: A method for displaying scanned ultrasound images of tissue employs an apparatus including an ultrasound probe mounted to a mechanical head. A three-dimensional positioning system mounts the head for positioning the probe in proximate orthogonal relation to the tissue. A computer controls the three-dimensional positioning system thereby moving the probe during a scan. The probe transmits high frequency ultrasound waves whose nominal frequency is included within the range from 30 to 100 MHz and with a large pass band, adapted to frequencies reflected by the tissue. The beams of ultrasound transmission are focused in a given zone of the tissue over a vertical penetration distance of between 20 and 30 mm. Reflected signals are acquired and processed for display.

Abstract: In a reactor of the invention, the reaction chamber (1) is defined by a leakproof wall (2) protected by a heater liner (14). The heater liner (14) is raised to a temperature higher than the condensation temperature of the polymers that are generated during the passivation step of an alternating plasma etching method so as to avoid depositing polymer on the leakproof wall (2) of the reaction chamber (1) or on the heater liner (14) itself. As a result, etching speed is kept constant.

Abstract: A method for displaying scanned ultrasound images of tissue employs an apparatus including an ultrasound probe mounted to a mechanical head. A three-dimensional positioning system mounts the head for positioning the probe in proximate orthogonal relation to the tissue. A computer controls the three-dimensional positioning system thereby moving the probe during a scan. The probe transmits high frequency ultrasound waves whose nominal frequency is included within the range from 30 to 100 MHz and with a large pass band, adapted to frequencies reflected by the tissue. The beams of ultrasound transmission are focused in a given zone of the tissue over a vertical penetration distance of between 20 and 30 mm. Reflected signals are acquired and processed for display.

Abstract: The present invention relates to the use of a high frequency ultrasound transducer with long focal length for making a device and for implementing a method of echographic exploration of tissue or organs of the human or animal body. More particularly, the invention relates to using an ultrasound transducer having a nominal excitation frequency greater than 20 MHz, preferably lying in the range 50 MHz to 80 MHz, with long focal length, greater than 10 mm, preferably about 25 mm, for making a device for echographic exploration of the eyeball, in particular of the posterior segment of the eyeball, and more particularly of the macular region.

Abstract: According to the invention, a substrate (2) contained in an enclosure (1) containing an atmosphere (5) that is maintained at low pressure by a device (6, 7) for generating a vacuum is subjected to plasma etching. Plasma generation means (8) generate a plasma (9) which acts on the surface (2a) of the substrate (2). The etching method subjects the substrate (2) to an alternating succession of steps comprising: an attack step using a plasma of etching gas coming from an etching gas source (19), a second step of passivation by means of a plasma of passivation gas coming from a passivation gas source (20), and a pulse step of selective depassivation by the action of a plasma of a cleaning gas coming from a cleaning gas source (21) and serving to remove the polymer from the bottom zones of cavities (2b) more effectively than does the etching gas.

Abstract: According to the invention, while performing plasma-enhanced chemical vapor deposition on a substrate by exposing the substrate in a vacuum to a flow of particles generated by a plasma, which particles react to form a passivation layer on the substrate, a grid is interposed between the plasma and the substrate, thereby reducing the flow of charged particles towards the substrate while conserving a flow of neutral particles. The grid is formed of metal wires that are crossed at a pitch that is less than two or three times the Debye length (?D) of the plasma used, at least at the beginning of deposition. The aging properties of semiconductor components made by such a method is thereby improved.

Abstract: The present invention relates to the use of a high frequency ultrasound transducer with long focal length for making a device and for implementing a method of echographic exploration of tissue or organs of the human or animal body. More particularly, the invention relates to using an ultrasound transducer having a nominal excitation frequency greater than 20 MHz, preferably lying in the range 50 MHz to 80 MHz, with long focal length, greater than 10 mm, preferably about 25 mm, for making a device for echographic exploration of the eyeball, in particular of the posterior segment of the eyeball, and more particularly of the macular region.

Abstract: The invention relates to a device and a process for acquiring bichromatic bar codes, with a two-dimensional sensor with electronic scanning. The height Hy of the scanned portion is modified between at least two successive scanning operations. Thus, the device is or may be adapted to the type and/or to characteristics not known in advance of the code to be read.

Abstract: The invention relates to a device and a process for acquiring bichromatic bar codes, with a two-dimensional sensor with electronic scanning. The height Hy of the scanned portion is modified between at least two successive scanning operations. Thus, the device is or may be adapted to the type and/or to characteristics not known in advance of the code to be read.