Patents by Inventor Michel Ravetto

Michel Ravetto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5794331
    Abstract: A process for exchanging a detection module hybridized by welding beads, balls or bumps, employs an interconnection support having first and second groups of welding elements. The module to be hybridized is provided with blocks wettable by the weld, and positioned facing elements of the first group during hybridization. A replacement module is provided with blocks wettable by the weld and positioned facing elements of the second group during hybridization. The module which has been hybridized is dehybridized, and the replacement module is hybridized by means of the second group of elements.
    Type: Grant
    Filed: May 31, 1996
    Date of Patent: August 18, 1998
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Michel Ravetto, Jean-Paul Chamonal, Fran.cedilla.ois Marion, Jean-Louis Pornin
  • Patent number: 5591959
    Abstract: The device includes at least two abutting detection elements (16, 18) having, on one face, a plurality of photodetectors (22, 24). A complementary detection element (26) has, on one face, a plurality of detectors (28) and is positioned astride the two abutting elements. The photodetectors of said complimentary element are positioned facing the faces of the two abutting elements and have no photodetector facing the photodetectors of the complementary element. The invention is useful in thermal imaging.
    Type: Grant
    Filed: October 27, 1994
    Date of Patent: January 7, 1997
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Charles Cigna, Claudine Petitprez, Fran.cedilla.ois Marion, Michel Ravetto
  • Patent number: 5321786
    Abstract: Process for the hybridization and positioning of an optoelectronic component on a substrate and application of this process to the positioning of a laser diode with respect to an optical guide.
    Type: Grant
    Filed: August 16, 1993
    Date of Patent: June 14, 1994
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Serge Valette, Michel Ravetto, Gerard Destefanis
  • Patent number: 5131584
    Abstract: Method and machine to interconnect electric components by welding elements.The components (20,24) are provided with electric contact blocks and, given the fact that two components are to be interconnected, the blocks of one of these components are covered with welding elements made of a low melting point metallic material able to be welded to the blocks, the latter being wettable by the material in its molten state, whereas their environment is not so. The components are placed in contact so that these elements cover the corresponding blocks of the other component and the assembly obtained is heated to a temperature enabling the material to be melted.Application for microelectronics.
    Type: Grant
    Filed: April 12, 1990
    Date of Patent: July 21, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Michelle Boitel, Francois Marion, Jean-Louis Pornin, Michel Ravetto
  • Patent number: 5119240
    Abstract: An assembly of parts forming an angle between facing surfaces of the parts and a process for producing an assembly is described. The parts (2, 4) are provided with contact elements or pads (6, 8, 10, 12) for connection to one another by means of a relatively low melting point metallic soldering material. The surface of each of the pads is wettable by the low melting point metallic material in the molten state, while areas surrounding the pads are not wettable. The contact pads of one of the parts are covered with flat coils or wafers (10, 12) of the low melting point metallic material. The wafers have the same thickness, but different volumes. The contact pads of the other part are placed on the corresponding wafers. The wafers' thickness, volumes, and spacing are chosen so that when the wafers are heated to the molten state and form truncated spherical drops due to surface tension, the parts form between them a predetermined angle. The invention has particular application to the manufacture of mirrors.
    Type: Grant
    Filed: August 8, 1990
    Date of Patent: June 2, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Francois Marion, Michel Ravetto, Jean-Luc Tissot
  • Patent number: 5107078
    Abstract: An electric connection of disconnection element is described as well as the corresponding connection or disconnection method and integrated circuits using such elements.The disconnection element consists of a disk or ingot joining two conductive tracks whose extremities are laid on wettable surfaces. Melting of the disk frees surface tension forces which separate its material into two balls centered on the wettable surfaces.The connection element is formed of two separate disks and, from the wettable surface pads, these disks are disposed opposite each other so that their material, once melted, unites to form a single droplet.A process is also disclosed for using these connection and disconnection elements for repairing defective integrated circuits.
    Type: Grant
    Filed: August 17, 1990
    Date of Patent: April 21, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Francois Marion, Michel Ravetto
  • Patent number: 4983840
    Abstract: Measuring system constituted by a radiation detection circuit (3) welded to a reading circuit (2) by metal members (4), which is itself welded to a grooved cover (9) by other metal members (19). The cover (9) is placed on a cryostat cold finger (1) and a cavity (6, 10) contains the two circuits (2, 3). This arrangement obviates the need for bonding and welding electrical connection wires and therefore simplifies assembly, alignment and parallelism of the different parts.
    Type: Grant
    Filed: April 19, 1990
    Date of Patent: January 8, 1991
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Louis Ouvrier-Buffet, Michel Ravetto
  • Patent number: 4295148
    Abstract: A layer of thickness x.sub.j is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thickness x.sub.1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x.sub.3, with x.sub.1 <x.sub.j. The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.
    Type: Grant
    Filed: March 21, 1979
    Date of Patent: October 13, 1981
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean Marine, Michel Ravetto