Abstract: Information carrier precursor comprising a rigid sheet or support; a receiving layer configuration comprising at least one layer; and at least one substance, optionally provided pattern-wise, capable of and available for interacting in situ with at least one species diffusing through the receiving layer configuration to produce a functional species, wherein at least one layer of the receiving layer configuration comprises at least one pigment, at least one binder, opaque porous parts capable of being rendered substantially transparent by penetration by a lacquer provided at the outermost surface of the receiving layer configuration and non-porous transparent parts; a method for producing the above-mentioned information carrier precursor; a method for producing an information carrier; and information carriers produced therewith.

Abstract: A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.

Abstract: Information carrier precursor comprising a rigid sheet or support; a receiving layer configuration comprising at least one layer; and at least one substance, optionally provided pattern-wise, capable of and available for interacting in situ with at least one species diffusing through the receiving layer configuration to produce a functional species, wherein at least one layer of the receiving layer configuration is opaque, porous, has the capability of being rendered substantially transparent by penetration by a lacquer provided at the outermost surface of the receiving layer configuration and comprises at least one pigment and at least one binder; a method for producing the above-mentioned information carrier precursor; a method for producing an information carrier; and information carriers produced therewith.

Abstract: A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.

Abstract: A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.

Abstract: A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.

Abstract: Passive memory devices comprising a support having at least one conductive surface or surface layer and having on at least one side of the support a passive memory element, the passive memory element comprising a first electrode system, an insulating system and a second electrode system, wherein the first electrode system is insulated from the second electrode system, wherein the first electrode system is a conductive surface, or a conductive layer of a support, the second electrode system is a plurality of isolated conductive areas and/or a plurality of conducting pins isolated from one another; and conductive bridges are present between at least one of the isolated conductive area, or at least one of the conducting pins, and the first electrode system; wherein with the exception of the first electrode system being a conductive surface of a support, the systems and the conductive bridges are printable using conventional printing processes.

Abstract: A non-volatile passive memory element comprising on a single surface a first electrode system and a second electrode system together with an insulating system, unless the insulating system is the surface, wherein the first electrode system is insulated from the second electrode system, the first and the second electrode systems are pattern systems and at least one conductive or semiconducting bridge is present between the first and second electrode systems, and wherein the non-volatile passive memory device is exclusive of metallic silicon and the systems and the conductive or semiconducting bridges are printable using conventional printing processes with the optional exception of the insulating system if the insulating system is the surface. A non-volatile passive memory device comprising a support and on at least one side of the support the above-mentioned non-volatile passive memory element.

Abstract: A non-volatile passive memory element comprising on a single surface a first electrode system and a second electrode system together with an insulating system, unless the insulating system is the surface, wherein the first electrode system is insulated from the second electrode system, the first and the second electrode systems are pattern systems and at least one conductive or semi-conducting bridge is present between the first and second electrode systems, and wherein the non-volatile passive memory device is exclusive of metallic silicon and the systems and the conductive or semiconducting bridges are printable using conventional printing processes with the optional exception of the insulating system if the insulating system is the surface. A non-volatile passive memory device comprising a support and on at least one side of the support the above-mentioned non-volatile passive memory element.

Abstract: Information carrier precursor comprising a rigid sheet or support; a receiving layer configuration comprising at least one layer; and at least one substance, optionally provided pattern-wise, capable of and available for interacting in situ with at least one species diffusing through the receiving layer configuration to produce a functional species, wherein at least one layer of the receiving layer configuration is opaque, porous, has the capability of being rendered substantially transparent by penetration by a lacquer provided at the outermost surface of the receiving layer configuration and comprises at least one pigment and at least one binder; a method for producing the above-mentioned information carrier precursor; a method for producing an information carrier; and information carriers produced therewith.

Abstract: A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.

Abstract: A non-volatile passive memory element comprising on a single surface a first electrode system and a second electrode system together with an insulating system, unless the insulating system is the surface, wherein the first electrode system is insulated from the second electrode system, the first and the second electrode systems are pattern systems and at least one conductive or semiconducting bridge is present between the first and second electrode systems, and wherein the non-volatile passive memory device is exclusive of metallic silicon and the systems and the conductive or semiconducting bridges are printable using conventional printing processes with the optional exception of the insulating system if the insulating system is the surface. A non-volatile passive memory device comprising a support and on at least one side of the support the above-mentioned non-volatile passive memory element.

Abstract: A process comprising the step of: contact printing a pattern of an electroless deposition catalyst via a hydrophilic phase to a receiving medium, wherein said electroless deposition catalyst requires no activation prior to electroless deposition.

Abstract: An offset printing process comprising the steps of: applying a hydrophilic phase to a printing plate with or without an oleophilic phase, the hydrophilic phase comprising at least one catalytic species, and applying the hydrophilic phase applied to the printing plate to a receiving medium thereby realizing in a single step a functional pattern of the at least one catalytic species on the receiving medium, wherein, if the hydrophilic phase is applied with the oleophilic phase, the oleophilic and hydrophilic phases are either applied separately from an ink and a fountain medium or are applied together in the form of a single fluid ink, the single fluid ink consisting of a dispersing phase and a dispersed phase, and the hydrophilic phase is exclusive of an ionomer.

Abstract: Passive memory devices comprising a support having at least one conductive surface or surface layer and having on at least one side of the support a passive memory element, the passive memory element comprising a first electrode system, an insulating system and a second electrode system, wherein the first electrode system is insulated from the second electrode system, wherein the first electrode system is a conductive surface, or a conductive layer of a support, the second electrode system is a plurality of isolated conductive areas and/or a plurality of conducting pins isolated from one another; and conductive bridges are present between at least one of the isolated conductive area, or at least one of the conducting pins, and the first electrode system; wherein with the exception of the first electrode system being a conductive surface of a support, the systems and the conductive bridges are printable using conventional printing processes; and a process for providing the passive memory device comprising the

Abstract: Passive memory devices comprising at least one passive memory element and a support having a non-conductive surface on the at least one side provided with the passive memory element, the passive memory element comprising a first electrode system, an insulating system and a second electrode system, wherein the first electrode system is a pattern system; wherein the first electrode is insulated from the second electrode system; wherein at least one conductive bridge is present between the first and the second electrode systems; wherein in the absence of the at least one conductive bridge there is no direct electrical contact between the first and the second patterned electrode systems; and wherein the systems and the conductive bridges are printable using conventional printing processes; and a process for providing a passive memory device, the passive memory device comprising at least one passive memory element and a support, the support having on the at least one side provided with a passive memory element eit