Patents by Inventor Michele BASSO

Michele BASSO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CUSTOMIZATION OF AUTONOMOUS-DRIVING LANE CHANGES OF MOTOR VEHICLES BASED ON DRIVERS' DRIVING BEHAVIOURS
    Publication number: 20220306113
    Abstract: An automotive active lane change assist designed to cause a motor vehicle to carry out autonomous-driving lane change manoeuvres and to customize the autonomous-driving lane change manoeuvres based on manual-driving lane change habits of a driver of the motor vehicle learnt during one or different manual-driving sessions of the motor vehicle. The automotive active lane change assist is further designed to customize the autonomous-driving lane change manoeuvres based on manual-driving lane change habits of a driver of the motor vehicle by determining one or different autonomous-driving lane change settings for one or different drivers of the motor vehicle and for one or different types or categories of roads along which the motor vehicle can carry out autonomous-driving lane change manoeuvres.
    Type: Application
    Filed: July 24, 2020
    Publication date: September 29, 2022
    Applicant: C.R.F. SOCIETA' CONSORTILE PER AZIONI
    Inventors: Enrico RAFFONE, Claudio REI, Michele BASSO
  • LDMOS device with integrated P-N junction diodes
    Patent number: 11282954
    Abstract: A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: March 22, 2022
    Assignee: STMicroelectronics S.r.l.
    Inventors: Marco Sambi, Michele Basso, Stefano Corona, Leonardo Di Biccari
  • ROBUST MOSFET DEVICE AND METHOD OF MANUFACTURING
    Publication number: 20200135919
    Abstract: A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.
    Type: Application
    Filed: October 25, 2019
    Publication date: April 30, 2020
    Applicant: STMicroelectronics S.r.l.
    Inventors: Marco SAMBI, Michele BASSO, Stefano CORONA, Leonardo DI BICCARI