Patents by Inventor Michele Calabretta
Michele Calabretta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11837558Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature.Type: GrantFiled: July 9, 2021Date of Patent: December 5, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Santo Alessandro Smerzi, Michele Calabretta, Alessandro Sitta, Crocifisso Marco Antonio Renna, Giuseppe D'Arrigo
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Patent number: 11756916Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.Type: GrantFiled: September 16, 2022Date of Patent: September 12, 2023Assignee: STMICROELECTRONICS S.R.L.Inventors: Michele Calabretta, Crocifisso Marco Antonio Renna, Sebastiano Russo, Marco Alfio Torrisi
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Publication number: 20230080594Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.Type: ApplicationFiled: September 16, 2022Publication date: March 16, 2023Applicant: STMICROELECTRONICS S.R.L.Inventors: Michele CALABRETTA, Crocifisso Marco Antonio RENNA, Sebastiano RUSSO, Marco Alfio TORRISI
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Patent number: 11482503Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.Type: GrantFiled: March 6, 2020Date of Patent: October 25, 2022Assignee: STMICROELECTRONICS S.r.l.Inventors: Michele Calabretta, Crocifisso Marco Antonio Renna, Sebastiano Russo, Marco Alfio Torrisi
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Publication number: 20210335730Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature.Type: ApplicationFiled: July 9, 2021Publication date: October 28, 2021Applicant: STMICROELECTRONICS S.r.l.Inventors: Santo Alessandro SMERZI, Michele CALABRETTA, Alessandro SITTA, Crocifisso Marco Antonio RENNA, Giuseppe D'ARRIGO
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Patent number: 11075172Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature.Type: GrantFiled: April 19, 2019Date of Patent: July 27, 2021Assignee: STMICROELECTRONICS S.r.l.Inventors: Santo Alessandro Smerzi, Michele Calabretta, Alessandro Sitta, Crocifisso Marco Antonio Renna, Giuseppe D'Arrigo
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Publication number: 20200294950Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.Type: ApplicationFiled: March 6, 2020Publication date: September 17, 2020Inventors: Michele CALABRETTA, Crocifisso Marco Antonio RENNA, Sebastiano RUSSO, Marco Alfio TORRISI
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Publication number: 20190326231Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature.Type: ApplicationFiled: April 19, 2019Publication date: October 24, 2019Inventors: Santo Alessandro SMERZI, Michele CALABRETTA, Alessandro SITTA, Crocifisso Marco Antonio RENNA, Giuseppe D'ARRIGO
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Publication number: 20170248534Abstract: A monitoring device is for a block of building material. The monitoring device may include an electric supply line configured to be buried in the block of building material and having a flexible main cable, and flexible jumper cables coupled to the flexible main cable and extending outwardly. The monitoring device may include sensor devices configured to be buried in the block of building material and coupled to respective ones of the flexible jumper cables. Each sensor device may include a primary inductor coupled to the electric supply line at a position based upon peaks of a stationary waveform when the electric supply line is alternating current (AC) powered, and a monitoring circuit. The monitoring circuit may include an integrated sensor, and a secondary inductor magnetically coupled to the primary inductor and configured to supply the integrated sensor, and communicate through the electric supply line.Type: ApplicationFiled: May 12, 2017Publication date: August 31, 2017Inventors: Giovanni GIRLANDO, Michele CALABRETTA, Francesco PAPPALARDO
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Patent number: 9678027Abstract: A monitoring device is for a block of building material. The monitoring device may include an electric supply line configured to be buried in the block of building material and having a flexible main cable, and flexible jumper cables coupled to the flexible main cable and extending outwardly. The monitoring device may include sensor devices configured to be buried in the block of building material and coupled to respective ones of the flexible jumper cables. Each sensor device may include a primary inductor coupled to the electric supply line at a position based upon peaks of a stationary waveform when the electric supply line is alternating current (AC) powered, and a monitoring circuit. The monitoring circuit may include an integrated sensor, and a secondary inductor magnetically coupled to the primary inductor and configured to supply the integrated sensor, and communicate through the electric supply line.Type: GrantFiled: March 27, 2015Date of Patent: June 13, 2017Assignee: STMICROELECTRONICS S.R.L.Inventors: Giovanni Girlando, Michele Calabretta, Francesco Pappalardo
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Publication number: 20150253268Abstract: A monitoring device is for a block of building material. The monitoring device may include an electric supply line configured to be buried in the block of building material and having a flexible main cable, and flexible jumper cables coupled to the flexible main cable and extending outwardly. The monitoring device may include sensor devices configured to be buried in the block of building material and coupled to respective ones of the flexible jumper cables. Each sensor device may include a primary inductor coupled to the electric supply line at a position based upon peaks of a stationary waveform when the electric supply line is alternating current (AC) powered, and a monitoring circuit. The monitoring circuit may include an integrated sensor, and a secondary inductor magnetically coupled to the primary inductor and configured to supply the integrated sensor, and communicate through the electric supply line.Type: ApplicationFiled: March 27, 2015Publication date: September 10, 2015Inventors: Giovanni Girlando, Michele Calabretta, Francesco Pappalardo