Patents by Inventor Michele K. Szepesi

Michele K. Szepesi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMS device and method of forming MEMS device
    Patent number: 7079301
    Abstract: A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the ac
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: July 18, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Michael G. Monroe, Eric L. Nikkel, Michele K. Szepesi, Stephen J. Potochnik, Richard P. Tomasco
  • MEMS device and method of forming MEMS device
    Patent number: 6914709
    Abstract: A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the ac
    Type: Grant
    Filed: October 2, 2003
    Date of Patent: July 5, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Michael G. Monroe, Eric L. Nikkel, Michele K. Szepesi, Stephen J. Potochnik, Richard P. Tomasco