Abstract: In an embodiment, a method includes receiving, between a positive input terminal and a negative input terminal, a supply voltage, receiving a data signal, generating, by a voltage generator in a branch of a plurality of branches, a branch current as a function of a respective driving signal and of a regulated voltage, each branch connected between the positive input terminal and the negative input terminal, selectively activating the voltage generator as a function of a respective enabling signal and providing, between a positive output terminal and a negative output terminal, the regulated voltage to one or more driving circuits.

Abstract: An embodiment voltage generation circuit, for a memory having a memory array with a plurality of memory cells coupled to respective wordlines and local bit-lines, each having a storage element and selector element, a bipolar transistor being coupled to the storage element for selective flow of a cell current during reading or verifying operations, and a base terminal of the selector element being coupled to a respective wordline; associated to each bit-line is a biasing transistor having a control terminal, and the circuit generates a cascode voltage for this control terminal; a driver stage is coupled to one end of each wordline. The circuit generates the cascode voltage based on a reference voltage, which is a function of the emulation of a voltage drop on the driver stage, on the wordline, and on the memory cell as a result of a current associated to the corresponding selector element.

Abstract: In an embodiment, a method includes receiving, between a positive input terminal and a negative input terminal, a supply voltage, receiving a data signal, generating, by a voltage generator in a branch of a plurality of branches, a branch current as a function of a respective driving signal and of a regulated voltage, each branch connected between the positive input terminal and the negative input terminal, selectively activating the voltage generator as a function of a respective enabling signal and providing, between a positive output terminal and a negative output terminal, the regulated voltage to one or more driving circuits.

Abstract: A voltage regulator and a phase change memory are disclosed. In an embodiment a phase-change memory includes an array of a plurality of phase-change memory cells, an address decoder configured for receiving an address signal and selecting a sub-area in the array of the plurality of memory cells, the selected sub-area having a given number of bits of a data signal and a writing circuit including a control circuit configured for receiving the data signal and determining, for each memory cell in the selected sub-area, whether a respective bit of the data signal indicates that the memory cell is to be changed from the amorphous state to the polycrystalline state and one or more driving circuits supplied via a regulated voltage and configured for applying the set current for the first interval to the memory cells that are to be changed from the amorphous state to the polycrystalline state.

Abstract: An embodiment voltage generation circuit, for a memory having a memory array with a plurality of memory cells coupled to respective wordlines and local bit-lines, each having a storage element and selector element, a bipolar transistor being coupled to the storage element for selective flow of a cell current during reading or verifying operations, and a base terminal of the selector element being coupled to a respective wordline; associated to each bit-line is a biasing transistor having a control terminal, and the circuit generates a cascode voltage for this control terminal; a driver stage is coupled to one end of each wordline. The circuit generates the cascode voltage based on a reference voltage, which is a function of the emulation of a voltage drop on the driver stage, on the wordline, and on the memory cell as a result of a current associated to the corresponding selector element.

Abstract: A voltage regulator and a phase change memory are disclosed. In an embodiment a phase-change memory includes an array of a plurality of phase-change memory cells, an address decoder configured for receiving an address signal and selecting a sub-area in the array of the plurality of memory cells, the selected sub-area having a given number of bits of a data signal and a writing circuit including a control circuit configured for receiving the data signal and determining, for each memory cell in the selected sub-area, whether a respective bit of the data signal indicates that the memory cell is to be changed from the amorphous state to the polycrystalline state and one or more driving circuits supplied via a regulated voltage and configured for applying the set current for the first interval to the memory cells that are to be changed from the amorphous state to the polycrystalline state.

Abstract: A reading circuit for a semiconductor memory, comprising: a circuital branch adapted to be electrically coupled to a bit line which is connected to a memory cell to be read; an evaluation circuit adapted to sense a cell electric current flowing through the bit line during a sensing phase of a reading operation of the data stored into the memory cell, the evaluation circuit comprising a negative feedback control loop adapted to control the potential of the bit line during the sensing phase, the control loop comprising a differential amplifier having an inverting input terminal operatively connected to the bit line, a non-inverting input terminal fed by a first reference potential, and a feedback circuital path connected between an output of the differential amplifier and the inverting input, wherein the feedback circuital path is adapted to conduct a measure current corresponding to the cell electric current, and comprises current/voltage conversion means for converting the measure current into a corresponding

Abstract: A reading circuit for a semiconductor memory, comprising: a circuital branch adapted to be electrically coupled to a bit line which is connected to a memory cell to be read; an evaluation circuit adapted to sense a cell electric current flowing through the bit line during a sensing phase of a reading operation of the data stored into the memory cell, the evaluation circuit comprising a negative feedback control loop adapted to control the potential of the bit line during the sensing phase, the control loop comprising a differential amplifier having an inverting input terminal operatively connected to the bit line, a non-inverting input terminal fed by a first reference potential, and a feedback circuital path connected between an output of the differential amplifier and the inverting input, wherein the feedback circuital path is adapted to conduct a measure current corresponding to the cell electric current, and comprises current/voltage conversion means for converting the measure current into a corresponding

Abstract: A reading circuit for a semiconductor memory, comprising: a circuital branch adapted to be electrically coupled to a bit line which is connected to a memory cell to be read; an evaluation circuit adapted to sense a cell electric current flowing through the bit line during a sensing phase of a reading operation of the data stored into the memory cell, the evaluation circuit comprising a negative feedback control loop adapted to control the potential of the bit line during the sensing phase, the control loop comprising a differential amplifier having an inverting input terminal operatively connected to the bit line, a non-inverting input terminal fed by a first reference potential, and a feedback circuital path connected between an output of the differential amplifier and the inverting input, wherein the feedback circuital path is adapted to conduct a measure current corresponding to the cell electric current, and comprises current/voltage conversion means for converting the measure current into a corresponding

Abstract: A sensing circuit for a semiconductor memory, includes, a detecting amplifier including a first circuital branch is run through by a first current corresponding to the sum of a second current as a function of a comparison current and a cell current. The cell current is a function of a state of a memory cell to be read in a predetermined biasing condition. A second circuital branch is coupled as a current mirror configuration with the first circuital branch. The second circuital branch is run through by a third current proportional to the first current. A third circuital branch coupled to the second branch sinks a fourth current as a function of the comparison current. A fourth circuital branch coupled to is run through by a residual current equal to the difference between the third and the fourth current. The residual current assumes different values depending on the fact that the cell current is lower, equal or higher than the comparison current.

Abstract: An output CMOS buffer includes MOS enhancement transistors and has a second complementary pair of natural or low threshold transistors, connected respectively in parallel to transistors of opposite type of conductivity of the complementary pair of enhancement MOS transistors of the final buffer stage. The gate terminals of the pair of natural or low threshold transistors are controlled by respective inverters, each supplied through a slew rate limiter of the slope of the driving current and are respectively connected between the positive supply node of the output buffer and a negative (below ground potential) node and between the common ground node of the output buffer and a positive supply node. The negative voltage and the positive voltage on the nodes are at least equal to the absolute value of the threshold voltage of the natural or low threshold transistors.

Abstract: A self-adaptive output buffer for an output terminal of an electronic circuit suitable to be connected to a load is proposed. The self-adaptive output buffer includes means for sensing an indication of the capacitance of the load and means for driving the load according to the sensing, wherein the means for sensing includes capacitive means with a preset capacitance, means for charging the capacitive means to a preset voltage, means for coupling the charged capacitive means with the load, and means for measuring a measuring voltage at the capacitive means due to a charge sharing between the capacitive means and the load.

Abstract: An output buffer for providing a buffered current to a circuit load includes a plurality of operative stages, each one for generating a component of the buffered current and an enabling circuit for selectively enabling each operative stage. The output buffer further comprises at least one auxiliary stage and control means for measuring a control current that can be delivered by the at least one auxiliary stage and for activating the enabling means according to the measured control current.

Abstract: An output CMOS buffer includes MOS enhancement transistors and has a second complementary pair of natural or low threshold transistors, connected respectively in parallel to transistors of opposite type of conductivity of the complementary pair of enhancement MOS transistors of the final buffer stage. The gate terminals of the pair of natural or low threshold transistors are controlled by respective inverters, each supplied through a slew rate limiter of the slope of the driving current and are respectively connected between the positive supply node of the output buffer and a negative (below ground potential) node and between the common ground node of the output buffer and a positive supply node. The negative voltage and the positive voltage on the nodes are at least equal to the absolute value of the threshold voltage of the natural or low threshold transistors.

Abstract: Described herein is a reading circuit for a nonvolatile memory device, wherein the currents flowing through an array memory cell to be read, and a reference memory cell with known contents, are converted into an array voltage and, respectively, into a reference voltage, which are compared to determine the contents of the array memory cell. The method envisages reducing the electrical stress to which the reference memory cell is subjected during reading, by generating and holding a sample of the reference voltage, then deselecting the reference memory cell, and then continuing reading using the sample of the reference voltage.

Abstract: A basic electronic circuit generates a magnitude. The circuit has certain structural characteristics and the magnitude undergoes variations in function of the structural characteristics of the circuit. The circuit comprises at least two circuit parts suitable for supplying respective fractions of the magnitude and the at least two circuit parts have different structural characteristics.

Abstract: An architecture for implementing an integrated capacity includes a capacitive block inserted between first and second voltage reference. The block is formed The block is formed from elementary capacitive modules. An enable block is inserted between the first voltage reference and the capacitive block and includes switches connected to the elementary capacitive modules and driven on their control terminals by control signals. Each switch of the enable block is inserted between the first voltage reference and a first end of a corresponding elementary capacitive module. A verify and enable circuit is connected to the first voltage reference, as well as at the input of the first end of the elementary capacitive modules and at the output of the control terminals of the switches of the enable block.

Abstract: A voltage-down converter for providing an output voltage lower than a power supply voltage of the converter is proposed. The converter includes voltage regulation means for obtaining an intermediate voltage corresponding to the output voltage from the power supply voltage by controlling a variable-conductivity element with a control signal resulting from a comparison between the intermediate voltage and a reference voltage, and an output stage for obtaining the output voltage from the power supply voltage by controlling a further variable-conductivity element with the control signal, wherein the further variable-conductivity element has a modular structure with at least one set of multiple basic modules, the converter further including means for enabling and/or disabling the modules of each set in succession according to a comparison between the output voltage and the intermediate voltage.

Abstract: A voltage regulator including an output stage to generate an output voltage based upon a control voltage determined as a function of a difference between a reference voltage and a voltage representative of the output voltage. A sense resistor is coupled in series with the output stage and an auxiliary power stage is coupled in parallel with the output stage and cooperates therewith to supply a load as a function of a voltage drop across the sense resistor. A scaled replica stage of the output stage is controlled by the control voltage to generate a replica voltage of the output voltage. A bias network biases the scaled replica stage and output stage with identical currents to keep constant bias voltages. The output stage, the auxiliary power stage, the scaled replica stage, and the bias network each have high voltage transistors.

Abstract: A reading circuit for a semiconductor memory, comprising: a circuital branch adapted to be electrically coupled to a bit line which is connected to a memory cell to be read; an evaluation circuit adapted to sense a cell electric current flowing through the bit line during a sensing phase of a reading operation of the data stored into the memory cell, the evaluation circuit comprising a negative feedback control loop adapted to control the potential of the bit line during the sensing phase, the control loop comprising a differential amplifier having an inverting input terminal operatively connected to the bit line, a non-inverting input terminal fed by a first reference potential, and a feedback circuital path connected between an output of the differential amplifier and the inverting input, wherein the feedback circuital path is adapted to conduct a measure current corresponding to the cell electric current, and comprises current/voltage conversion means for converting the measure current into a corresponding