Patents by Inventor Michele VIMERCATI

Michele VIMERCATI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for manufacturing a microelectromechanical device with a mobile structure, in particular a micromirror
    Patent number: 11440794
    Abstract: A bottom semiconductor region is formed to include a main sub-region, extending through a bottom dielectric region that coats a semiconductor wafer, and a secondary sub-region which coats the bottom dielectric region and surrounds the main sub-region. First and second top cavities are formed through the wafer, delimiting a fixed body and a patterned structure that includes a central portion which contacts the main sub-region, and deformable portions in contact with the bottom dielectric region. A bottom cavity is formed through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region including the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities. The parts left exposed by the bottom cavity are selectively removed.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: September 13, 2022
    Assignee: STMicroelectronics S.r.l.
    Inventors: Sonia Costantini, Davide Assanelli, Aldo Luigi Bortolotti, Michele Vimercati, Igor Varisco
  • PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL DEVICE WITH A MOBILE STRUCTURE, IN PARTICULAR A MICROMIRROR
    Publication number: 20200079645
    Abstract: A bottom semiconductor region is formed to include a main sub-region, extending through a bottom dielectric region that coats a semiconductor wafer, and a secondary sub-region which coats the bottom dielectric region and surrounds the main sub-region. First and second top cavities are formed through the wafer, delimiting a fixed body and a patterned structure that includes a central portion which contacts the main sub-region, and deformable portions in contact with the bottom dielectric region. A bottom cavity is formed through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region including the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities. The parts left exposed by the bottom cavity are selectively removed.
    Type: Application
    Filed: September 10, 2019
    Publication date: March 12, 2020
    Applicant: STMicroelectronics S.r.l.
    Inventors: Sonia COSTANTINI, Davide ASSANELLI, Aldo Luigi BORTOLOTTI, Michele VIMERCATI, Igor VARISCO