Abstract: A method is provided for using SACVD deposition to deposit at least one layer of dielectric material inside a deposition reactor during the fabrication of at least one semiconductor integrated circuit. According to the method, a reaction chamber is provided for carrying out SACVD deposition, and a stream of a first reaction gas containing oxygen plasma is supplied into a gas feed conduit connected to the reaction chamber. Microwaves are applied inside the gas feed conduit in order to produce sufficient oxygen radicals from the oxygen plasma, the oxygen radicals being necessary to initiate SACVD deposition. A stream of a second reaction gas is supplied into the reaction chamber, with the second reaction gas being suitable to initiate SACVD deposition when reacting with oxygen radicals.

Abstract: A method is provided for using SACVD deposition to deposit at least one layer of dielectric material inside a deposition reactor during the fabrication of at least one semiconductor integrated circuit. According to the method, a reaction chamber is provided for carrying out SACVD deposition, and a stream of a first reaction gas containing oxygen plasma is supplied into a gas feed conduit connected to the reaction chamber. Microwaves are applied inside the gas feed conduit in order to produce sufficient oxygen radicals from the oxygen plasma, the oxygen radicals being necessary to initiate SACVD deposition. A stream of a second reaction gas is supplied into the reaction chamber, with the second reaction gas being suitable to initiate SACVD deposition when reacting with oxygen radicals.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: A method of deposits polymeric layers of silicon oxynitride onto a surface of a semiconductor material substrate by a Chemical Vapor Deposition technique using at least one organosilane chemical precursor. In some embodiments, the organosilane comprises a combination of silicon, nitrogen, carbon and hydrogen, a specific example of which can be hexamethyldisiloxane. This technique can be used for all standard types of deposition, LPCVD, APCVD, SACVD and PECVD. Using HMDSN provides more uniform layers to be formed on the substrate, with increased quality. Specifically, step-coverage is better than in prior techniques, there is more uniformity of the layers, parameters of the deposition are easier to control, there is improved stoichiometry in the formed layers, and the production process uses materials that are more environmentally healthy than those used previously.

Abstract: A method is provided for using SACVD deposition to deposit at least one layer of dielectric material inside a deposition reactor. According to the method, a stream of a remote plasma of a reaction gas is supplied into the reactor, and microwaves are applied inside a gas feed conduit of the reactor in order to produce sufficient radicals of the reaction gas to initiate a deposition reaction. Also provided is a deposition reactor for performing an SACVD deposition technique for fabricating a semiconductor integrated circuit. The reactor includes a reaction chamber, a heater for heating the chamber, at least one reaction gas feed conduit, and a magnetron device. The reaction gas feed conduit supplies a reaction gas to the interior of the chamber, and the magnetron device produces sufficient radicals of the reaction gas within the chamber to initiate a deposition reaction.