Abstract: Embodiments of an electronic device comprising an enclosure and electrical components disposed at least partially inside the enclosure, wherein the enclosure comprises a substrate having a tactile surface are disclosed. The tactile surface may include a textured surface, a coated surface or a coated textured surface that exhibits a low fingerprint visibility, when a fingerprint is applied to the tactile surface. In one or more embodiments, the substrate exhibits an average transmittance of about 80% or greater over the visible spectrum, a coefficient of friction less than about 0.3, a surface roughness Ra of about 500 nm or greater, and either one or both a transmission haze greater than about 60%, and a reflection haze at either 2 degrees from specular or 5 degrees from specular greater than 60%.

Abstract: Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?540° C., thermal expansion coefficient of from 6.5 to 9.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: Intermediate to high CTE glass compositions and laminates formed from the same are described. The glasses described herein have properties, such as liquidus viscosity or liquidus temperature, which make them particularly well suited for use in fusion forming processes, such as the fusion down draw process and/or the fusion lamination process. Further, the glass composition may be used in a laminated glass article, such as a laminated glass article formed by a fusion laminate process, to provide strengthened laminates via clad compression as a result of CTE mismatch between the core glass and clad glass.

Abstract: A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points?540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: Intermediate to high CTE glass compositions and laminates formed from the same are described. The glasses described herein have properties, such as liquidus viscosity or liquidus temperature, which make them particularly well suited for use in fusion forming processes, such as the fusion down draw process and/or the fusion lamination process. Further, the glass composition may be used in a laminated glass article, such as a laminated glass article formed by a fusion laminate process, to provide strengthened laminates via clad compression as a result of CTE mismatch between the core glass and clad glass.

Abstract: Intermediate to high CTE glass compositions and laminates formed from the same are described. The glasses described herein have properties, such as liquidus viscosity or liquidus temperature, which make them particularly well suited for use in fusion forming processes, such as the fusion down draw process and/or the fusion lamination process. Further, the glass composition may be used in a laminated glass article, such as a laminated glass article formed by a fusion laminate process, to provide strengthened laminates via clad compression as a result of CTE mismatch between the core glass and clad glass.

Abstract: A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points?540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?540° C., thermal expansion coefficient of from 6.5 to 9.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content ?10 ppm, a F wt. % concentration ?0.5 wt. %.

Abstract: The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content≦10 ppm, a F wt. % concentration≧0.5 wt. %.

Abstract: The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content ≦10 ppm, a F wt. % concentration ≧0.5 wt. %.

Abstract: The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content ≦10 ppm, a F wt. % concentration ≧0.5 wt. %.

Abstract: The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content ≦10 ppm, a F wt. % concentration ≧0.5 wt. %.