Abstract: A non-corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water; and (b) a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid. Preferably, the at least one carboxylic acid has a pKa value ranging from 3 to 6. Also, a method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue; and (b) contacting the substrate with a cleaning composition comprising water; and a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid.

Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

Abstract: The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

Abstract: The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

Abstract: The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

Abstract: A non-corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water; and (b) a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid. Preferably, the at least one carboxylic acid has a pKa value ranging from 3 to 6. Also, a method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue; and (b) contacting the substrate with a cleaning composition comprising water; and a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid.

Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Abstract: Wet etch processes utilize compatible deep UV photoresist compositions having binder resins that are either:

Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.