Patents by Inventor Michelle M. Roberts

Michelle M. Roberts has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Released freestanding strained heterojunction structures
    Patent number: 7973336
    Abstract: Growth of multilayer films is carried out in a manner which allows close control of the strain in the grown layers and complete release of the grown films to allow mounting of the released multilayer structures on selected substrates. A layer of material, such as silicon-germanium, is grown onto a template layer, such as silicon, of a substrate having a sacrificial layer on which the template layer is formed. The grown layer has a lattice mismatch with the template layer so that it is strained as deposited. A top layer of crystalline material, such as silicon, is grown on the alloy layer to form a multilayer structure with the grown layer and the template layer. The sacrificial layer is preferentially etched away to release the multilayer structure from the sacrificial layer, relaxing the grown layer and straining the crystalline layers interfaced with it.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: July 5, 2011
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Donald E. Savage, Michelle M. Roberts, Max G. Lagally
  • FABRICATION OF STRAINED HETEROJUNCTION STRUCTURES
    Publication number: 20080296615
    Abstract: Growth of multilayer films is carried out in a manner which allows close control of the strain in the grown layers and complete release of the grown films to allow mounting of the released multilayer structures on selected substrates. A layer of material, such as silicon-germanium, is grown onto a template layer, such as silicon, of a substrate having a sacrificial layer on which the template layer is formed. The grown layer has a lattice mismatch with the template layer so that it is strained as deposited. A top layer of crystalline material, such as silicon, is grown on the alloy layer to form a multilayer structure with the grown layer and the template layer. The sacrificial layer is preferentially etched away to release the multilayer structure from the sacrificial layer, relaxing the grown layer and straining the crystalline layers interfaced with it.
    Type: Application
    Filed: May 8, 2007
    Publication date: December 4, 2008
    Inventors: Donald E. Savage, Michelle M. Roberts, Max G. Lagally
  • Fabrication of strained heterojunction structures
    Patent number: 7229901
    Abstract: Growth of multilayer films is carried out in a manner which allows close control of the strain in the grown layers and complete release of the grown films to allow mounting of the released multilayer structures on selected substrates. A layer of material, such as silicon-germanium, is grown onto a template layer, such as silicon, of a substrate having a sacrificial layer on which the template layer is formed. The grown layer has a lattice mismatch with the template layer so that it is strained as deposited. A top layer of crystalline material, such as silicon, is grown on the alloy layer to form a multilayer structure with the grown layer and the template layer. The sacrificial layer is preferentially etched away to release the multilayer structure from the sacrificial layer, relaxing the grown layer and straining the crystalline layers interfaced with it.
    Type: Grant
    Filed: December 16, 2004
    Date of Patent: June 12, 2007
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Donald E. Savage, Michelle M. Roberts, Max G. Lagally