Abstract: The present disclosure provides a method of selectively doping a semiconductor material for fabricating a solar cell. The method comprises forming at least one angled groove in the semiconductor material and forming a diffusion barrier on the semiconductor material. The diffusion barrier comprises a diffusion barrier material that is selected so that diffusing of a dopant material through the diffusion barrier is reduced. The method also comprises doping the semiconductor material by exposing the semiconductor material to the dopant material in a manner such that a region of the semiconductor material that is covered by the diffusion barrier has a predetermined first dopant concentration. In addition, the method comprises forming an electrical contact within the at least one angled groove after exposing the semiconductor material to the dopant material.