Abstract: Methods for forming metal contacts to silicon substrates in semiconductor devices for contact diameters less than 60 nm and the devices formed from such processes are described. The methods includes the steps of pre-cleaning the silicon surface where the metal contact will be formed, depositing a silicide material and a sacrificial liner, forming the silicide material, removing or stripping the non-reacted portions of the silicide material non-reacted portions of the sacrificial liner, optionally performing an additional oxide clean, and depositing the liner and the metal for the contact. Such a process allows the formation of W contacts with dimension of 60 nm and below without a significant amount of defects.