Patents by Inventor Michelle Turner Leonard

Michelle Turner Leonard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
    Patent number: 6630690
    Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: October 7, 2003
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard
  • Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
    Patent number: 6492193
    Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: December 10, 2002
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard
  • Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
    Patent number: 6373077
    Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: April 16, 2002
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard
  • Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
    Publication number: 20020008241
    Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
    Type: Application
    Filed: September 28, 2001
    Publication date: January 24, 2002
    Inventors: John Adam Edmond, Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard
  • Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
    Patent number: 6201262
    Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
    Type: Grant
    Filed: October 7, 1997
    Date of Patent: March 13, 2001
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard
  • Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
    Patent number: 6187606
    Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
    Type: Grant
    Filed: September 20, 1999
    Date of Patent: February 13, 2001
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard