Abstract: A chemically amplified photosensitive resin composition containing a first compound forming an acid by irradiation of actinic ray and a second compound that changes the solubility to an aqueous alkali solution with acid-catalyzed reaction wherein an ion dissociative compound having the composition represented by the general formula (1) or (2), as well a method of forming a resist pattern using the composition are disclosed, the formulae being expressed by: where each of R2, R3 and R4 represents hydrogen, and an alkyl or aryl group of 1 to 7 carbon atoms, at least one of R1, R2, R3 and R4 represents hydrogen, Y1 represents chlorine, bromine, iodine, carbonate group of 1 to 7 carbon atoms or sulfonate group of 1 to 7 carbon atoms, and

Abstract: A photosensitive resin composition comprising (A) an alkaline aqueous solution-soluble novolak resin, (B) a photosensitizer obtained by reacting a polyhydroxy compound with 1,2-naphthoquinone-(2)-diazido-5(or 4)-sulfonyl chloride, and (C) an ultraviolet absorber such as 2-(2'-hydroxy-5'-methylphenyl)-benzotriazole, has a strong absorption against a light of a wavelength of 365 nm and is suitable for producing semiconductor elements, etc.

Abstract: The present invention relates to a method of forming a pattern using a photosensitive film having bleaching properties for use as a contrast enhancing layer. The photosensitive film comprises an aromatic diazonium salt having extremely high purity content. In addition, no harmful metals are incorporated during preparation. Fine patterns of various semiconductor devices can thus be formed with high accuracy. The diazonium salt is selected from the group consisting of trifluromethanesulfonic acid salt, methanesulfonic acid salts, and trifluromethaneacetic salts of aromatic diazonium compounds.

Abstract: A photosensitive resin composition comprising (A) an alkaline aqueous solution-soluble novolak resin, (B) a photosensitizer obtained by reacting a polyhydroxy compound with 1,2-naphthoquinone-(2)-diazido-5(or 4)-sulfonyl chloride, and (C) an ultraviolet absorber such as 2-(2'-hydroxy-5'-methylphenyl)-benzotriazole, has a strong absorption against a light of a wavelength of 365 nm and is suitable for producing semiconductor elements, etc.

Abstract: This invention relates to a process for forming a pattern using a photosensitive composition comprising a polymeric azide and a high-molecular weight copolymer or polymer. The photosensitive composition comprises a copolymer containing at least a water-soluble non-photosensitive monomeric unit having an electrolytic functional group, a monomeric unit having an azido group and an electrolytic functional group and a high-soluble high molecular weight copolymer or polymer which exhibits reciprocity law failure characteristic.

Abstract: A process for forming a pattern comprising forming an alkali-soluble polymer layer on a substrate, forming a radiation-sensitive composition layer containing a diazonium salt on the alkali-soluble polymer layer to form a resist layer having a two-layer structure, exposing the resist layer to a radiation to cause the change in solubility in an aqueous alkaline solution at the boundary between the two layers and forming a predetermined pattern in the resist layer by a usual resist process. The resist layer may comprise a plurality of layers comprising the two-layer structure as a repeating unit structure.

Abstract: Disclosed is a radiation sensitive composition which comprises a radiation sensitive compound decreased in absorption of radiation upon irradiation with radiation and an organic polymer which, upon being formed into a film, changes in its solubility and decreases in solubility in a desired solvent due to the presence of decomposition product of said radiation sensitive compound which is produced by irradiation with the radiation. A process of formation of pattern using said composition is also disclosed. Fine resist pattern of 0.5 .mu.m line-and-space patterns or less can be formed with sufficiently high contrast.

Abstract: A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.

Abstract: A photosensitive composition comprising an azide compound represented by the formula: ##STR1## wherein each of X and Y is an aromatic substituent group, at least one of X and Y being an aromatic substituent group having an azide group, and n and m are zeros or integers of 1, and a polymeric compound. Since this composition has high resolution and is photosensitive to light having a wavelength of 436 nm, it permits employment of a reduction projection printer and is suitable for fabrication of semiconductor devices.

Abstract: A photosensitive composition comprising an equimolar condensation product of an aromatic azide compound having an aldehyde group and isophorone, and an alkali-soluble polymeric compound is a negative-type photoresist with a high resolution suitable for the fabrication of semiconductor devices.

Abstract: Disclosed is a method of producing color filters, which comprises forming a layer of an organic polymeric material having a predetermined light-sensitive characteristic on a substrate, exposing this layer to a predetermined pattern, developing the exposed layer to form a filter base and dyeing the filter base, wherein after the development of the exposed layer, the layer is wetted with a dehydrating solution to remove water from the filter base. By this dehydrating treatment, the filter base can be processed with very high precision.

Abstract: A color solid-state imager comprising a semiconductor body which has a photoelectric conversion function and which includes at least photosensitive elements and switching elements, and predetermined color filters which are formed on the body; characterized in that a light absorbing layer is disposed at least over a vicinity of an output terminal of each switching element. The contours of the color filters can be accurately formed, and unnecessary light can be intercepted to stabilize the electrical characteristics of the solid-state imager.

Abstract: According to a solid-state imager of this invention, in case where a plurality of color filters are disposed on a semiconductor body for the solid-state imager including a plurality of photosensitive regions and where the color filter of a third color is constructed by the overlapping between filter members of a first color and a second color, that one of the filter members which has a spectral transmittance substantially transmitting light for exposure for use in forming the filter members is arranged as a lower layer closer to a substrate of the semiconductor body. Even when the filter members are formed by the exposure process, a solid-state imager having good characteristics can be manufactured.

Abstract: A method of producing color filters comprising:a step for forming a photosensitive film by coating, on a rugged substrate, a mixture of a light-absorbing material which absorbs light and which can be removed with a solvent and a photosensitive material;a step for irradiating light onto the photosensitive film through a predetermined pattern;a step for removing dissolvable portions of the photosensitive film and the light-absorbing material from the photosensitive film which remains on the substrate; anda step for dyeing the photosensitive film into any desired color.

Abstract: A color solid-state imager comprises a semiconductor body over which are successively laminated a predetermined number of filter layers of any desired shape having predetermined spectral characteristics and, laminated on the filter layers, a predetermined number of layers composed of a transparent, organic high molecular material which is sensitive to radiation, the semiconductor substrate having at least a detector portion composed of an array of a plurality of optical detector elements. The method of making color solid-state imagers can be simplified by at least using the radiation-sensitive high molecular material for the intermediate layers or protection layers which are used for forming a laminate construction of color-decomposing filters.Further, in mounting the color-decomposing filters on the semiconductor substrate, it is particularly preferred to form beforehand a film of an organic high molecular material.

Abstract: A patternwise coated powder layer can be formed by a process comprising the steps of coating a photosensitive composition, which contains an aromatic diazonium salt as a photosensitive component and becomes sticky by exposure, onto the surface of a substrate to form a thin layer, subjecting the thin layer to patternwise exposure with actinic radiation to produce stickiness at the exposed area, and then contacting powder particles with the thin layer after exposure to make the thin layer to accept the powder particles according to the powder acceptability of the thin layer. According to this process, for example, the phosphor screen of a color picture tube can simply be produced.LIST OF PRIOR ART (37 CFR 1.56 (a))The following reference is cited to show the state of the art:Japanese Patent Laid-Open Publication No.

Abstract: This invention relates to light sensitive photoresist materials which are used in the photo-engraving process or in the production of the phosphor screens of color picture tubes. The light sensitive photoresist materials of this invention are novel, water-soluble azide materials.