Abstract: There is provided a copper alloy backing tube formed of a copper alloy having a composition containing 0.10 mass % or more and 0.30 mass % or less of Co, 0.030 mass % or more and 0.10 mass % or less of P, 0.01 mass % or more and 0.50 mass % or less of Sn, 0.02 mass % or more and 0.10 mass % or less of Ni, and 0.01 mass % or more and 0.10 mass % or less of Zn. A copper balance containing impurities. A mass ratio [Co]/[P] is set to be within a range of 3.0 or higher and 6.0 or lower. A thermal conductivity is set to 250 W/(m·K) or higher. A micro-Vickers hardness after a heating treatment is performed in a condition of being held for one hour at 250° C. is 100 Hv or higher, and a decrease rate from a hardness before the heating treatment is set to 5% or less.

Abstract: A hot extruded material for a cylindrical sputtering target is provided, in which a purity of copper is in a range of 99.99 mass % to 99.9995 mass %, an Al content is 0.

Abstract: A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 ?m to 150 ?m and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.

Abstract: Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios L?N/LN which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios L?N/LN, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

Abstract: In a method for manufacturing a Ca-containing copper alloy, a Ca addition step of adding Ca to molten copper is provided, and, in the Ca addition step, a copper-coated Ca material (20) obtained by coating a surface of a metallic Ca (21) with copper (22) is used. In the copper-coated Ca material (20), an oxygen content in the copper (22) that coats the metallic Ca (21) is preferably set to less than 100 ppm by mass.

Abstract: Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios L?N/LN which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios L?N/LN, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

Abstract: A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 ?m to 150 ?m and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.