Abstract: Signal correction in a bipolar transistor circuit having a base-emitter voltage and a non-linear output signal corresponding to a detectable characteristic is improved by correcting non-linearity in the signal at third and/or higher-orders. According to an example embodiment of the present invention, the output of the transistor is corrected as a function of the base-emitter voltage, the non-linear output signal and a generated non-linearity. The generated non-linearity is adapted to cancel the non-linearity of the non-linear output signal when added thereto. Various implementations of the present invention are applicable to a variety of applications, each of which may have selected characteristics that are accounted for by the generated non-linearity, which is selectively adapted for each particular application. In this manner, third and higher-order corrections can be made, and the detection of characteristics such as data, temperature and other terms is improved.

Abstract: Signal correction in a bipolar transistor circuit having a base-emitter voltage and a non-linear output signal corresponding to a detectable characteristic is improved by correcting non-linearity in the signal at third and/or higher-orders. According to an example embodiment of the present invention, the output of the transistor is corrected as a function of the base-emitter voltage, the non-linear output signal and a generated non-linearity. The generated non-linearity is adapted to cancel the non-linearity of the non-linear output signal when added thereto. Various implementations of the present invention are applicable to a variety of applications, each of which may have selected characteristics that are accounted for by the generated non-linearity, which is selectively adapted for each particular application. In this manner, third and higher-order corrections can be made, and the detection of characteristics such as data, temperature and other terms is improved.