Patents by Inventor Michiel Alexander Blauw

Michiel Alexander Blauw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMBRANE FOR EUV LITHOGRAPHY
    Publication number: 20240004283
    Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 4, 2024
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Maxim Aleksandrovich Nasalevich, Erik Achilles ABEGG, Nirupam BANERJEE, Michiel Alexander BLAUW, Derk Servatius Gertruda BROUNS, Paul JANSSEN, Matthias KRUIZINGA, Egbert LENDERINK, Nicolae MAXIM, Andrey NIKIPELOV, Arnoud Willem NOTENBOOM, Claudia PILIEGO, Mária PÉTER, Gijsbert RISPENS, Nadja SCHUH, Marcus Adrianus VAN DE KERKHOF, Willem Joan VAN DER ZANDE, Pieter-Jan VAN ZWOL, Antonius Willem VERBURG, Johannes Petrus Martinus Bernardus VERMEULEN, David Ferdinand VLES, Willem-Pieter VOORTHUIJZEN, Aleksandar Nikolov ZDRAVKOV
  • Membrane for EUV lithography
    Patent number: 11762281
    Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: September 19, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Maxim Aleksandrovich Nasalevich, Erik Achilles Abegg, Nirupam Banerjee, Michiel Alexander Blauw, Derk Servatius Gertruda Brouns, Paul Janssen, Matthias Kruizinga, Egbert Lenderink, Nicolae Maxim, Andrey Nikipelov, Arnoud Willem Notenboom, Claudia Piliego, Mária Péter, Gijsbert Rispens, Nadja Schuh, Marcus Adrianus Van De Kerkhof, Willem Joan Van Der Zande, Pieter-Jan Van Zwol, Antonius Willem Verburg, Johannes Petrus Martinus Bernardus Vermeulen, David Ferdinand Vles, Willem-Pieter Voorthuijzen, Aleksandar Nikolov Zdravkov
  • MEMBRANE FOR EUV LITHOGRAPHY
    Publication number: 20210109438
    Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
    Type: Application
    Filed: December 22, 2020
    Publication date: April 15, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Maxim Aleksandrovich Nasalevich, Erik Achilles Abegg, Nirupam Banerjee, Michiel Alexander Blauw, Derk Servatius Gertruda Brouns, Paul Janssen, Matthias Kruizinga, Egbert Lenderink, Nicolae Maxim, Andrey Nikipelov, Arnoud Willem Notenboom, Claudia Piliego, Mária Péter, Gijsbert Rispens, Nadja Schuh, Marcus Adrianus Van De Kerkhof, Willem Joan Van Der Zande, Pieter-Jan Van Zwol, Antonius Willem Verburg, Johannes Petrus Martinus Bernardus Vermeulen, David Ferdinand Vles, Willem-Pieter Voorthuijzen, Aleksandar Nikolov Zdravkov
  • Membrane for EUV lithography
    Patent number: 10908496
    Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Maxim Aleksandrovich Nasalevich, Erik Achilles Abegg, Nirupam Banerjee, Michiel Alexander Blauw, Derk Servatius Gertruda Brouns, Paul Janssen, Matthias Kruizinga, Egbert Lenderink, Nicolae Maxim, Andrey Nikipelov, Arnoud Willem Notenboom, Claudia Piliego, Mária Péter, Gijsbert Rispens, Nadja Schuh, Marcus Adrianus Van De Kerkhof, Willem Joan Van Der Zande, Pieter-Jan Van Zwol, Antonius Willem Verburg, Johannes Petrus Martinus Bernardus Vermeulen, David Ferdinand Vles, Willem-Pieter Voorthuijzen, Aleksandar Nikolov Zdravkov
  • A MEMBRANE FOR EUV LITHOGRAPHY
    Publication number: 20190129299
    Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
    Type: Application
    Filed: April 12, 2017
    Publication date: May 2, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Maxim Aleksandrovich NASALEVICH, Erik Achilles ABEGG, Nirupam BANERJEE, Michiel Alexander BLAUW, Derk Servatius Gertruda BROUNS, Paul JANSSEN, Matthias KRUIZINGA, Egbert LENDERINK, Nicolae MAXIM, Andrey NIKIPELOV, Arnoud Willem NOTENBOOM, Claudia PILIEGO, Mária PÉTER, Gijsber RISPENS, Nadja SCHUH, Marcus Adrianus VAN DE KERKHOF, Willem Joan VAN DER ZANDE, Pieter-Jan VAN ZWOL, Antonius Willem VERBURG, Johannes Petrus Martinus Bernardus VERMEULEN, David Ferdinand VLES, Willem-Pieter VOORTHUIJZEN, Aleksandar Nikolov ZDRAVICOV
  • METHOD AND DEVICE FOR ETCHING A SUBSTRATE BY MEANS OF PLASMA
    Publication number: 20100003827
    Abstract: In a method and device for etching a substrate by a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source (1) in a channel of system of at least one conductive cascaded plate between the cathode and anode. The plasma is released from the plasma source to a treatment chamber (2) in which the substrate (9) is exposed to the plasma. The treatment chamber is sustained at a reduced, near vacuum pressure during operation.
    Type: Application
    Filed: July 12, 2007
    Publication date: January 7, 2010
    Applicant: TECHNISCHE UNIVERSITEIT EINDHOVEN
    Inventors: Wilhelmus Mathijs Marie Kessels, Mauritius Cornelis Van De Sanden, Michiel Alexander Blauw, Freddy Roozeboom