Abstract: Methods for low-temperature formation of one or more thin-film semiconductor structures on a substrate that include the steps of, forming a (poly)silane layer over a substrate, transforming one or more parts of the (poly)silane layer in one or more thin-film solid-state semiconductor structures, by exposing the one or more parts with light from an

Abstract: A method for manufacturing a submicron semiconductor structure on a substrate, including: forming at least one template layer over a support substrate; forming one or more template structures, including one or more recesses and/or mesas, in the template layer, the one or more template structures including one or more edges extending into or out of the top surface of the template layer; coating at least part of the one or more template structures with a liquid semiconductor precursor; and, annealing and/or exposing the liquid semiconductor precursor coated template structures to light, wherein during the annealing and/or light exposure a part of the liquid semiconductor precursor accumulates by capillary forces against at least part of the one or more edges, the annealing and/or light exposure transforming the accumulated liquid semiconductor precursor into a submicron semiconductor structure extending along at least part of the one or more edges.

Abstract: A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate, preferably a flexible substrate, the first layer having a (poly)silane; and, irradiating with light having one or more wavelength within the range between 200 and 400 nm for transforming the polysilane in silicon, preferably amorphous silicon or polysilicon.

Abstract: A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate, preferably a flexible substrate, the first layer having a (poly)silane; and, irradiating with light having one or more wavelength within the range between 200 and 400 nm for transforming the polysilane in silicon, preferably amorphous silicon or polysilicon.

Abstract: A method for manufacturing a submicron semiconductor structure on a substrate, including: forming at least one template layer over a support substrate; forming one or more template structures, including one or more recesses and/or mesas, in the template layer, the one or more template structures including one or more edges extending into or out of the top surface of the template layer; coating at least part of the one or more template structures with a liquid semiconductor precursor; and, annealing and/or exposing the liquid semiconductor precursor coated template structures to light, wherein during the annealing and/or light exposure a part of the liquid semiconductor precursor accumulates by capillary forces against at least part of the one or more edges, the annealing and/or light exposure transforming the accumulated liquid semiconductor precursor into a submicron semiconductor structure extending along at least part of the one or more edges.

Abstract: A method for the manufacture of at least part of a thin-film device including forming one or more indentations in a substrate, preferably a plastic substrate, an indentation having sidewalls and a base; filling at least one of the one or more indentations with a first ink, the first ink having a first material precursor, preferably a first metal-, semiconductor-, or a metal-oxide precursor; and, annealing at least a portion of the first ink such that a surface of the base inside the indentation is dewetted and a narrowed first structure of the first material inside of the indentation is formed.

Abstract: A method for the manufacture of at least part of a thin-film device including forming one or more indentations in a substrate, preferably a plastic substrate, an indentation having sidewalls and a base; filling at least one of the one or more indentations with a first ink, the first ink having a first material precursor, preferably a first metal-, semiconductor-, or a metal-oxide precursor; and, annealing at least a portion of the first ink such that a surface of the base inside the indentation is dewetted and a narrowed first structure of the first material inside of the indentation is formed.