Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: A display unit of the present disclosure includes a plurality of pixel circuits each including a light-emitting element, a drive transistor that has a drain and a source and supplies a current to the light-emitting element, and a control transistor connected to the drain or the source of the drive transistor. One channel portion is formed for two control transistors in respective adjacent two of the pixel circuits.

Abstract: There are provided a thin film transistor having a simple structure that allows reduction in leakage current at the time of gate negative bias, and a method of manufacturing the thin film transistor, and a display unit and an electronic apparatus. The thin film transistor includes: a gate electrode; a semiconductor film including a channel region that faces the gate electrode; and an insulating film provided at least at a position near an end portion on the gate electrode side of side walls of the semiconductor film.

Abstract: A semiconductor device includes: a gate electrode layer; a gate insulating film provided on the gate electrode layer; a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film. A face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.

Abstract: A thin film transistor comprising an insulating film, a gate electrode embedded in a superficial portion of the insulating film, a gate insulating film on the gate electrode and the insulating film, a semiconductor film on the gate insulating film, a channel protection film on a portion of the semiconductor film with end surfaces which have a forward tapered slope, a first electrode on the semiconductor film which mounts onto one tapered side of the channel protection film, and a second electrode on the semiconductor film which mounts onto the other tapered side of the channel protection film, where an edge of the gate electrode closest to the first electrode is offset towards the second electrode from the point where the first electrode abuts the semiconductor film.

Abstract: A method of manufacturing a semiconductor integrated circuit including a logic part and a memory array part, the logic part having N-type and P-type FETs, and the memory array part having N-type and P-type FETs, includes the steps of forming N-type and P-type FETs constituting the logic part and the memory array part, thereafter sequentially forming a first insulation film having a tensile stress and a second insulation film on the whole surface, selectively removing the second insulation film and the first insulation film present on the upper side of the region of the P-type FET constituting the logic part, then forming a third insulation film having a compressive stress on the whole surface, and thereafter selectively removing the third insulation film present on the upper side of the region of the N-type FET constituting the logic part and the third insulation film present on the upper side of the regions of the N-type and P-type FETs constituting the memory array part.

Abstract: A method of manufacturing a semiconductor integrated circuit including a logic part and a memory array part, the logic part having N-type and P-type FETs, and the memory array part having N-type and P-type FETs, includes the steps of forming N-type and P-type FETs constituting the logic part and the memory array part, thereafter sequentially forming a first insulation film having a tensile stress and a second insulation film on the whole surface, selectively removing the second insulation film and the first insulation film present on the upper side of the region of the P-type FET constituting the logic part, then forming a third insulation film having a compressive stress on the whole surface, and thereafter selectively removing the third insulation film present on the upper side of the region of the N-type FET constituting the logic part and the third insulation film present on the upper side of the regions of the N-type and P-type FETs constituting the memory array part.

Abstract: A method of manufacturing a semiconductor integrated circuit including a logic part and a memory array part, the logic part having N-type and P-type FETs, and the memory array part having N-type and P-type FETs, includes the steps of forming N-type and P-type FETs constituting the logic part and the memory array part, thereafter sequentially forming a first insulation film having a tensile stress and a second insulation film on the whole surface, selectively removing the second insulation film and the first insulation film present on the upper side of the region of the P-type FET constituting the logic part, then forming a third insulation film having a compressive stress on the whole surface, and thereafter selectively removing the third insulation film present on the upper side of the region of the N-type FET constituting the logic part and the third insulation film present on the upper side of the regions of the N-type and P-type FETs constituting the memory array part.

Abstract: A method of manufacturing a semiconductor integrated circuit including a logic part and a memory array part, the logic part having N-type and P-type FETS, and the memory array part having N-type and P-type FETS, includes the steps of forming N-type and P-type FETs constituting the logic part and the memory array part, thereafter sequentially forming a first insulation film having a tensile stress and a second insulation film on the whole surface, selectively removing the second insulation film and the first insulation film present on the upper side of the region of the P-type FET constituting the logic part, then forming a third insulation film having a compressive stress on the whole surface, and thereafter selectively removing the third insulation film present on the upper side of the region of the N-type FET constituting the logic part and the third insulation film present on the upper side of the regions of the N-type and P-type FETs constituting the memory array part.