Abstract: A probe structure is provided with: a holding plate which has a first surface and a second surface in which at least the first surface is insulated; a plurality of electrodes which are formed on the first surface of the holding plate in such a state that the plurality of electrodes is separated from each other; and carbon nanotube structures which are erected on the electrodes 3. The holding plate is provided with through holes which correspond to the electrodes, respectively.

Abstract: A flip chip method of joining a chip and a substrate is described. A thermo-compression bonder is utilized to align the chip and substrate and apply a contact force to hold solder bumps on the substrate against metal bumps on the chip. The chip is rapidly heated from its non-native side by a pulse heater in the head of the bonder until the re-flow temperature of the solder bumps is reached. Proximate with reaching the re-flow temperature at the solder bumps, the contact force is released. The solder is held above its re-flow temperature for several seconds to facilitate wetting of the substrate's metal protrusions and joining. A no-clean flux that has a volatilization temperature below the melting point of the solder bumps is utilized to minimize or eliminate the need for a post interconnection de-flux operation.

Abstract: A flip chip method of joining a chip and a substrate is described. A thermo-compression bonder is utilized to align the chip and substrate and apply a contact force to hold solder bumps on the substrate against metal bumps on the chip. The chip is rapidly heated from its non-native side by a pulse heater in the head of the bonder until the re-flow temperature of the solder bumps is reached. Proximate with reaching the re-flow temperature at the solder bumps, the contact force is released. The solder is held above its re-flow temperature for several seconds to facilitate wetting of the substrate's metal protrusions and joining. A no-clean flux that has a volatilization temperature below the melting point of the solder bumps is utilized to minimize or eliminate the need for a post interconnection de-flux operation.

Abstract: A flip chip method of joining a chip and a substrate is described. A thermo-compression bonder is utilized to align the chip and substrate and apply a contact force to hold solder bumps on the substrate against metal bumps on the chip. The chip is rapidly heated from its non-native side by a pulse heater in the head of the bonder until the re-flow temperature of the solder bumps is reached. Proximate with reaching the re-flow temperature at the solder bumps, the contact force is released. The solder is held above its re-flow temperature for several seconds to facilitate wetting of the substrate's metal protrusions and joining. A no-clean flux that has a volatilization temperature below the melting point of the solder bumps is utilized to minimize or eliminate the need for a post interconnection de-flux operation.

Abstract: An isolated structural Bacillus sp. TB-90 (FERM BP-795) urease gene, which comprises base sequences encoding the amino acid sequences of three subunits of urease. A recombinant DNA comprising Bacillus sp. TB-90 (FERM BP-795) urease gene capable of replicating in Escherichia coli. A process for producing urease, which comprises cultivating Escherichia coli carrying a recombinant DNA comprising Bacillus sp.

Abstract: A cathode-ray tube having a face plate which includes a phosphor layer provided at the inner surface side of a glass plate and an optical interference filter provided between the phosphor layer and the inner surface of the plate. The optical interference filter is constituted by high- and low-refractive index layers. The outermost layer of the optical interference filter in contact with the phosphor layer is an Al.sub.2 O.sub.3 layer or a ZrO.sub.2 layer having a physical thickness of 10 nm or more. The high-refractive index layer of the optical interference filter preferably consists of TiO.sub.2, and its low-refractive index layer preferably consists of Al.sub.2 O.sub.3.