Patents by Inventor Michihisa Yano

Michihisa Yano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6858977
    Abstract: The cathode-ray tube according to the present invention has on the inner surface of the funnel section of the body thereof a laminated layer comprising a first layer of black material, a metal backing layer and a second layer of black material. According to the configuration of the cathode-ray tube of the present invention, stray light reflected within the body of the cathode-ray tube is absorbed by the first layer of black material on the inner surface of the funnel, while stray light reflected off the inner surface of the funnel is absorbed by the second layer of black material. This makes it possible to reduce the amount of stray light incident upon the effective screen area of the panel section.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: February 22, 2005
    Assignee: Sony Corporation
    Inventors: Tsuneharu Nomura, Norihiro Ohse, Tomohiko Abe, Michihisa Yano, Seiji Kawaberi, Hisashi Kimura, Tsutomu Arai
  • Publication number: 20030015954
    Abstract: The cathode-ray tube according to the present invention has on the inner surface of the funnel section of the body thereof a laminated layer comprising a first layer of black material, a metal backing layer and a second layer of black material.
    Type: Application
    Filed: May 23, 2002
    Publication date: January 23, 2003
    Inventors: Tsuneharu Nomura, Norihiro Ohse, Tomohiko Abe, Michihisa Yano, Seiji Kawaberi, Hisashi Kimura, Tsutomu Arai
  • Patent number: 5648276
    Abstract: A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber.
    Type: Grant
    Filed: May 26, 1994
    Date of Patent: July 15, 1997
    Assignee: Sony Corporation
    Inventors: Masaki Hara, Naoki Sano, Toshiyuki Sameshima, Atsushi Kohno, Mitsunobu Sekiya, Yasuhiro Kanaya, Michihisa Yano
  • Patent number: 5552663
    Abstract: The present invention enlarges the effective display area of a CRT for projecting while maintaining the strength of the panel necessary to allow for normal usage without breaking. The inside portion of the effective display area inside the rectangular display area is of a predetermined radius, and protrudes inward, extending in all directions. The four corners of the display area are outside of the circular boundary line comprised of the standard thickness Tf. Non-display areas H which are outside the boundary line are flat or protuberant, and have a thickness greater than the standard thickness Tf. Accordingly, with the present invention, the effective display area A2 can be made larger than previous effective display areas A1 in the prior art, which could not extend beyond a border that included the four corners, while maintaining overall the necessary strength.
    Type: Grant
    Filed: September 22, 1994
    Date of Patent: September 3, 1996
    Assignee: Sony Corporation
    Inventors: Koichi Iida, Michihisa Yano