Abstract: A film forming method of forming a silicon carbide film on a substrate to be processed includes: forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container; and removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container.

Abstract: There is provided a film forming apparatus for heating a target substrate on a stage, supplying a processing gas to the target substrate, and performing a film forming process on the target substrate, including: an accommodation part having an internal space for accommodating the stage, wherein the processing gas is supplied to the internal space and is inductively heated; a rotary shaft part configured to rotatably support the stage; and an elevating part configured to raise and lower the target substrate to deliver the target substrate between an external substrate transfer device and the stage, wherein at least one of the rotary shaft part and the elevating part is formed of a material having a thermal conductivity of 15 W/m·K or less and a melting point of 1,800 degrees C. or higher.

Abstract: A coating film forming apparatus includes: a coating nozzle; a horizontal moving mechanism that relatively moves a substrate and the coating nozzle; a pressure regulating mechanism that regulates a pressure inside the coating nozzle; and a controller that changes an amount of the coating solution to be supplied from the coating nozzle, wherein the coating nozzle includes: a discharge port that is formed long in a direction perpendicular to a direction of the relative movement with respect to the substrate; and a storage chamber that communicates with the discharge port and stores the coating solution therein, and wherein while the coating solution is applied to the substrate, the pressure regulating mechanism is controlled according to a change in width of the substrate, to regulate the pressure inside the storage chamber to thereby change a discharge amount per unit time of the coating solution to be discharged.

Abstract: A joining device includes a first holding unit configured to load and hold the first member on its top surface; a second holding unit disposed above the first holding unit while facing the first holding unit and configured to hold the second member; and a position adjustment mechanism configured to adjust a joining position between the first member held by the first holding unit and the second member held by the second holding unit. The second holding unit is of a circular plate shape, and the position adjustment mechanism includes four position-adjusting cam members disposed at equal intervals along an outer peripheral surface of the second holding unit, and moves the second holding unit in a horizontal direction.

Abstract: Disclosed is a pickup method in which a first suction unit is caused to approach and come into contact with a chip adhered to an adhesive sheet, and a second suction unit which is formed with a concavity on a contact surface configured to come into contact with the adhesive sheet is caused to approach and come into contact with the adhesive sheet in such a manner as to be opposite to the first suction unit. The adhesive sheet is sucked by the second suction unit that is in contact with the adhesive sheet, and a fluid is injected between the adhesive sheet and the chip by an injection unit. As a result, the adhesive sheet is detached from a portion of the chip opposite to the concavity, and in the state where the chip is being sucked by the first suction unit, the first suction unit is caused to be spaced away from the adhesive sheet that is being sucked by the second suction unit. In this manner, the chip is detached and picked up from the adhesive sheet.

Abstract: A coating film forming apparatus includes: a coating nozzle; a horizontal moving mechanism that relatively moves a substrate and the coating nozzle; a pressure regulating mechanism that regulates a pressure inside the coating nozzle; and a controller that changes an amount of the coating solution to be supplied from the coating nozzle, wherein the coating nozzle includes: a discharge port that is formed long in a direction perpendicular to a direction of the relative movement with respect to the substrate; and a storage chamber that communicates with the discharge port and stores the coating solution therein, and wherein while the coating solution is applied to the substrate, the pressure regulating mechanism is controlled according to a change in width of the substrate, to regulate the pressure inside the storage chamber to thereby change a discharge amount per unit time of the coating solution to be discharged.

Abstract: A joining device includes a first holding unit configured to load and hold the first member on its top surface; a second holding unit disposed above the first holding unit while facing the first holding unit and configured to hold the second member; and a position adjustment mechanism configured to adjust a joining position between the first member held by the first holding unit and the second member held by the second holding unit. The second holding unit is of a circular plate shape, and the position adjustment mechanism includes four position-adjusting cam members disposed at equal intervals along an outer peripheral surface of the second holding unit, and moves the second holding unit in a horizontal direction.

Abstract: In a method for forming a sintered silver coating film, for use as a heat spreader, on a semiconductor substrate or a semiconductor package, a coating film of an ink or paste containing silver nanoparticles is formed on one surface of the semiconductor substrate or the substrate package. Further, the coating film is sintered by heating the coating film under an atmosphere of a humidity of 30% to 50% RH (30° C.) by a ventilation oven.

Abstract: A mounting method of sequentially mounting elements on a substrate includes a mounting process of mounting one element, which is taken out by a take-out part from an accommodating part in which the elements are accommodated, on a first contact region of the surface of the substrate where a liquid is coated. The method further includes a coating process of coating a liquid, by a coating part movably provided together with the take-out part, on a contact region of the surface of the substrate different from the first contact region when the one element is mounted on the first region.

Abstract: A mounting method of sequentially mounting elements on a substrate includes a mounting process of mounting one element, which is taken out by a take-out part from an accommodating part in which the elements are accommodated, on a first contact region of the surface of the substrate where a liquid is coated. The method further includes a coating process of coating a liquid, by a coating part movably provided together with the take-out part, on a contact region of the surface of the substrate different from the first contact region when the one element is mounted on the first region.

Abstract: A mounting method of mounting an element on a substrate, includes a first hydrophilization process of hydrophilizing a region on a surface of the substrate where the element is to be joined; a second hydrophilization process of hydrophilizing the surface of the element; a mounting process of mounting the element on a mounting part such that the hydrophilized surface of the element faces upwards; a coating process of coating a liquid on the hydrophilized surface of the element; and an arrangement process of arranging the substrate above the mounting part such that the region on the surface of the substrate where the element is to be joined faces downwards. The method further includes a contact process of bringing the substrate arranged above the mounting part close to the mounting part on which the element is mounted to bring the liquid into contact with the surface of the substrate.

Abstract: A bonding apparatus includes a thermal treating unit and a bonding unit that are integrally bonded together. The thermal treating unit includes a first thermal treating plate for supporting and thermally processing a superimposed substrate. The bonding unit includes a second thermal treating plate for supporting and thermally processing the superimposed substrate processed in thermal treating unit, and a pressing mechanism for pressing the superimposed substrate against the second thermal treating plate. The first thermal treating plate includes a cooling mechanism for cooling the superimposed substrate placed on the first heating plate. Each unit can depressurize the internal atmosphere to a specified degree of vacuum. The thermal treating unit has a plurality of carrying mechanisms for conveying the wafers between the two units.

Abstract: A bonding apparatus includes a thermal treating unit and a bonding unit that are integrally bonded together. The thermal treating unit includes a first thermal treating plate for supporting and thermally processing a superimposed substrate. The bonding unit includes a second thermal treating plate for supporting and thermally processing the superimposed substrate processed in thermal treating unit, and a pressing mechanism for pressing the superimposed substrate against the second thermal treating plate. The first thermal treating plate includes a cooling mechanism for cooling the superimposed substrate placed on the first heating plate. Each unit can depressurize the internal atmosphere to a specified degree of vacuum. The thermal treating unit has a plurality of carrying mechanisms for conveying the wafers between the two units.