Abstract: The present invention provides a method including measuring a wavefront aberration of the optical system to be measured on a measurement surface, measuring a pupil transmittance distribution of the optical system determining a pupil function of the optical system based on the wavefront aberration and the pupil transmittance distribution, and performing imaging computation using the pupil function to obtain a light intensity distribution formed on an image plane of the optical system, and calculating a flare, generated in the optical system, from the light intensity distribution.

Abstract: In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

Abstract: The present invention provides a method including measuring a wavefront aberration of the optical system to be measured on a measurement surface, measuring a pupil transmittance distribution of the optical system determining a pupil function of the optical system based on the wavefront aberration and the pupil transmittance distribution, and performing imaging computation using the pupil function to obtain a light intensity distribution formed on an image plane of the optical system, and calculating a flare, generated in the optical system, from the light intensity distribution.

Abstract: In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.