Abstract: A working machine is provided with a plurality of exchangeable components, and each component is provided with a wireless tag. A component ID is stored in advance in the wireless tag. When, on the side of the working machine, a component exchange timing or an engine starting timing is detected, the component ID stored in the wireless tag is acquired, and is transmitted to a working machine management device. The working machine management device checks the component ID which has been received from the working machine and a component ID which is stored in a component ID storage means against one another. And, if these two component IDs do not match one another, an abnormal state detection means outputs a warning signal.

Abstract: A working machine is provided with a plurality of exchangeable components, and each component is provided with a wireless tag. A component ID is stored in advance in the wireless tag. When, on the side of the working machine, a component exchange timing or an engine starting timing is detected, the component ID stored in the wireless tag is acquired, and is transmitted to a working machine management device. The working machine management device checks the component ID which has been received from the working machine and a component ID which is stored in a component ID storage means against one another. And, if these two component IDs do not match one another, an abnormal state detection means outputs a warning signal.

Abstract: A working machine is provided with a plurality of exchangeable components, and each component is provided with a wireless tag. A component ID is stored in advance in the wireless tag. When, on the side of the working machine, a component exchange timing or an engine starting timing is detected, the component ID stored in the wireless tag is acquired, and is transmitted to a working machine management device. The working machine management device checks the component ID which has been received from the working machine and a component ID which is stored in a component ID storage means against one another. And, if these two component IDs do not match one another, an abnormal state detection means outputs a warning signal.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.