Abstract: A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SIC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.

Abstract: A heat float switch includes a first member and a second member. The first member includes a base member and a carbon nanotube layer formed on a surface of the base member. The heat float switch switches states between a connected state in which the carbon nanotube layer of the first member is in contact with the second member and an unconnected state in which the carbon nanotube layer of the first member is not in contact with the second member.

Abstract: A graphene/SiC composite material is provided in which a large-area graphene layer that is flat at an atomic level is formed on an SiC single crystal substrate. The process for producing the graphene/SiC composite material includes the steps of removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing an Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming an SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.

Abstract: A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SIC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.

Abstract: A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.

Abstract: The present invention relates to a novel method of manufacturing carbon nanotubes and a method of manufacturing a nanotube film that is composed of a multitude of carbon nanotubes so oriented as to extend along a thickness direction of the film. The present invention further relates to a structure equipped with a carbon nanotube film formed on a surface of a base plate portion. In the method of the present invention, SiC is heated under vacuum to remove silicon atoms from the SiC, whereby the carbon nanotubes are formed at a portion of the SiC where the silicon atoms have been removed. This method makes it possible to manufacture carbon nanotubes with high yields as well as high purity. The carbon nanotubes formed according to this method tend to be oriented perpendicularly to the surface of the SiC crystal. Thus, it is possible to obtain a nanotube film composed of the aforementioned carbon nanotubes with a high degree of orientation.

Abstract: To provide a high-temperature stable transition-type alumina that does not undergo transformation into .alpha.-alumina even at high-temperature exceeding 1300.degree. C., and a method for producing the transition-type alumina.A metal aluminum block is placed on a block of .alpha.-alumina composed of Al.sub.2 O.sub.3. Portions of the .alpha.-alumina block and the metal aluminum block close to their boundary was strongly heated by contacting the flame of burning gas with the portions. Alumina and a relatively small amount of magnesium are thereby vaporized, and allowed to react with oxygen in the atmosphere, thereby obtaining a transition-type alumina that contains a small amount of magnesium in the crystal structure. The transition-type alumina obtained by this method is substantially of single crystal type, and does not undergo transformation into .alpha.-alumina even at high temperatures exceeding 1300.degree. C.