Abstract: A substrate processing apparatus includes: a circulation pipe which defines a circulation passage through which a chemical liquid within a chemical-liquid tank is circulated; a supply pipe which guides the chemical liquid from the circulation pipe to a chemical-liquid nozzle; a supply valve which is switched between an open state in which the chemical liquid flowing through the supply pipe toward the chemical-liquid nozzle is passed and a closed state in which the supply of the chemical liquid from the supply pipe to the chemical-liquid nozzle is stopped; a recovery pipe which guides the chemical liquid from a cup to the chemical-liquid tank; and a branch pipe which guides the chemical liquid within the circulation pipe to the recovery pipe.

Abstract: A substrate processing apparatus includes a suctioning unit for suctioning a processing liquid existing inside a processing liquid pipe that communicates with a discharge port, and a controller. In the suctioning step, the controller executes a suctioning step of suctioning the processing liquid existing inside the processing liquid pipe by the suctioning unit. The controller selectively executes a first suctioning step of retracting a leading end surface of the processing liquid and disposing the leading end surface of the processing liquid after suctioning in a preliminarily set standby position inside the processing liquid pipe, and a second suctioning step of retracting the leading end surface of the processing liquid further back than the standby position.

Abstract: A substrate rotation mechanism rotates the substrate holder about a central axis. A top plate opposes the upper surface of the substrate and rotates about the central axis. A gas supply part supplies a treatment atmospheric gas to a radial central part of a lower space that is a space below the top plate. An ion generator generates and supplies ions to the treatment atmospheric gas supplied from the gas supply part. Then, in a state in which the top plate is positioned lower than when the substrate is transported into the apparatus, the treatment atmospheric gas that contains the ions is supplied to the lower space to form an ion stream that spreads radially outward from the radial central part of the lower space while rotating the substrate holder and the top plate. Accordingly, charges can be dissipated from the top plate with a simple structure.

Abstract: A substrate processing apparatus includes: a circulation pipe which defines a circulation passage through which a chemical liquid within a chemical-liquid tank is circulated; a supply pipe which guides the chemical liquid from the circulation pipe to a chemical-liquid nozzle; a supply valve which is switched between an open state in which the chemical liquid flowing through the supply pipe toward the chemical-liquid nozzle is passed and a closed state in which the supply of the chemical liquid from the supply pipe to the chemical-liquid nozzle is stopped; a recovery pipe which guides the chemical liquid from a cup to the chemical-liquid tank; and a branch pipe which guides the chemical liquid within the circulation pipe to the recovery pipe.

Abstract: A substrate processing apparatus includes: a circulation pipe which defines a circulation passage through which a chemical liquid within a chemical-liquid tank is circulated; a supply pipe which guides the chemical liquid from the circulation pipe to a chemical-liquid nozzle; a supply valve which is switched between an open state in which the chemical liquid flowing through the supply pipe toward the chemical-liquid nozzle is passed and a closed state in which the supply of the chemical liquid from the supply pipe to the chemical-liquid nozzle is stopped; a recovery pipe which guides the chemical liquid from a cup to the chemical-liquid tank; and a branch pipe which guides the chemical liquid within the circulation pipe to the recovery pipe.

Abstract: A substrate rotation mechanism rotates the substrate holder about a central axis. A top plate opposes the upper surface of the substrate and rotates about the central axis. A gas supply part supplies a treatment atmospheric gas to a radial central part of a lower space that is a space below the top plate. An ion generator generates and supplies ions to the treatment atmospheric gas supplied from the gas supply part. Then, in a state in which the top plate is positioned lower than when the substrate is transported into the apparatus, the treatment atmospheric gas that contains the ions is supplied to the lower space to form an ion stream that spreads radially outward from the radial central part of the lower space while rotating the substrate holder and the top plate. Accordingly, charges can be dissipated from the top plate with a simple structure.

Abstract: A substrate treatment apparatus is provided with a plurality of substrate treatment parts and a liquid treatment system. The substrate treatment part has a substrate retaining part, which retains a substrate, and a discharge nozzle, which discharges a treatment liquid to the substrate retained by the substrate retaining part. The liquid treatment system has: a storage tank that stores in the treatment liquid; a supply piping part that is connected to the storage tank and forms a supply passage through which the treatment liquid to be supplied to the discharge nozzle passes; a return piping part that is connected to the storage tank and forms a return passage that returns the treatment liquid passed through the supply piping part to the storage tank; and a gas supply part that supplies a nitrogen gas different from oxygen dissolved in the treatment liquid into the return passage of the return piping part.

Abstract: A substrate processing apparatus includes a substrate holding unit having a spin base; a blocking member having a substrate facing surface facing an upper surface of the substrate held by the substrate holding unit and having a diameter larger than the spin base; a blocking member lifting unit raising and lowering the blocking member between a blocking position where a space between the substrate facing surface and the upper surface is blocked from lateral side on the upper surface and a retreat position where the space is not blocked from the lateral side on the upper surface; guards including an inner side and an outer side guards respectively surrounding periphery of the substrate holding unit and surrounding periphery of the inner side guard. An inner circumferential end of the outer side guard is positioned on radial outer side of an inner circumferential end of the inner side guard.

Abstract: A substrate processing apparatus includes a processing liquid supply nozzle to supply a processing liquid to a substrate, a storage portion that stores the processing liquid supplied, a liquid-sending pipe that sends the processing liquid stored in the storage portion to the nozzle, a flow pipe that allows a processing liquid to flow therethrough, an oxygen concentration meter interposed in the flow pipe, a hypoxic fluid supply pipe that is in communication with the flow pipe and that sends a hypoxic fluid to the flow pipe, and a flow rate changing valve interposed in the hypoxic fluid supply pipe. A flow-rate-changing controller controls the flow rate changing valve so that the hypoxic fluid is supplied to the flow pipe until an inside of the flow pipe is filled with the hypoxic fluid when the processing liquid inside the flow pipe is drained.

Abstract: A substrate processing apparatus includes a substrate holder that holds a substrate, a processing liquid piping that is communicatively connected with a discharge port for discharging a processing liquid, a processing liquid supplier that supplies the processing liquid to the processing liquid piping, a suction unit for suctioning the processing liquid present inside the processing liquid piping, and a controller which controls the processing liquid supplying unit and the suction unit. The controller executes a processing liquid supplying step that supplies the processing liquid to the processing liquid piping and a suctioning step that suctions the processing liquid inside the processing liquid piping by the suction unit. The controller selectively executes a first suctioning step and a second suctioning step of the processing liquid.

Abstract: A substrate processing apparatus includes a spin chuck, rotating a disk-shaped substrate around a rotational axis while holding it horizontally, a cylindrical guard, receiving a processing liquid scattered outward from the substrate held by the spin chuck, and a centering unit, which brings a center of the substrate close to the rotational axis. The centering unit includes a pusher, contacting the substrate on the spin chuck, and a linear motor, moving the pusher horizontally to move the substrate horizontally with respect to the spin chuck. At least a portion of the linear motor is disposed above the guard such as to overlap with the guard in plan view.

Abstract: A substrate processing apparatus includes a suctioning unit for suctioning a processing liquid existing inside a processing liquid pipe that communicates with a discharge port, and a controller. In the suctioning step, the controller executes a suctioning step of suctioning the processing liquid existing inside the processing liquid pipe by the suctioning unit. The controller selectively executes a first suctioning step of retracting a leading end surface of the processing liquid and disposing the leading end surface of the processing liquid after suctioning in a preliminarily set standby position inside the processing liquid pipe, and a second suctioning step of retracting the leading end surface of the processing liquid further back than the standby position.

Abstract: A substrate treatment apparatus includes a substrate retainer that horizontally retains the substrate. A blocking portion has a lower surface facing an upper surface of said substrate and a tapered surface extending diagonally upward from an inner periphery of the lower surface toward a center of the lower surface. A rotary portion rotates the substrate and the blocking portion about a vertical rotary axis. A first supply unit supplies treatment liquid and a second supply unit supplies rinse liquid toward a tapered surface from the center of the rotated blocking portion through said opening of said blocking portion. The first supply unit supplies the treatment liquid during a first period and the second supply unit supplies the rinse liquid during a second overlapping period.

Abstract: A substrate processing apparatus includes a processing unit supplying at least one of a plurality of types of chemical liquids to a substrate and a scrubber cleaning an exhaust by bringing the exhaust in contact with a scrubbing liquid. The scrubber includes an exhaust passage that guides the exhaust, generated at the processing unit and containing the chemical liquid, toward an exhaust equipment disposed outside the substrate processing apparatus and a discharger that is able to discharge each of a plurality of types of scrubbing liquids that clean the exhaust individually inside the exhaust passage. A controller selects any one of the plurality of types of scrubbing liquids based on the type of chemical liquid contained in the exhaust and makes the selected scrubbing liquid be discharged from the discharger.

Abstract: A substrate processing apparatus includes a processing liquid supply nozzle to supply a processing liquid to a substrate, a storage portion that stores the processing liquid supplied, a liquid-sending pipe that sends the processing liquid stored in the storage portion to the nozzle, a flow pipe that allows a processing liquid to flow therethrough, an oxygen concentration meter interposed in the flow pipe, a hypoxic fluid supply pipe that is in communication with the flow pipe and that sends a hypoxic fluid to the flow pipe, and a flow rate changing valve interposed in the hypoxic fluid supply pipe. A flow-rate-changing controller controls the flow rate changing valve so that the hypoxic fluid is supplied to the flow pipe until an inside of the flow pipe is filled with the hypoxic fluid when the processing liquid inside the flow pipe is drained.

Abstract: A substrate processing apparatus includes a substrate holding unit which holds a substrate, a processing liquid piping which is communicatively connected with a discharge port for discharging a processing liquid to a major surface of the substrate, a processing liquid supplying unit for supplying the processing liquid to the processing liquid piping, a suction unit for suctioning the processing liquid present inside the processing liquid piping, and a controller which controls the processing liquid supplying unit and the suction unit, wherein the controller executes a processing liquid supplying step which supplies the processing liquid to the processing liquid piping in order to discharge it from the discharge port by the processing liquid supplying unit and a suctioning step which suctions the processing liquid inside the processing liquid piping by the suction unit, and the controller selectively executes a first suctioning step in which, in the suctioning step, the processing liquid is suctioned and a lea

Abstract: A substrate processing apparatus has a labyrinth around a processing liquid nozzle above a nozzle gap, and a seal gas is supplied to the labyrinth to seal the nozzle gap from an external space. Consequently, the entry of the atmosphere of the external space into a processing space through the nozzle gap can be suppressed. An opposing-member flange part of a top plate has a first uneven part on the upper surface, and a holder body of an opposing-member moving mechanism has a second uneven part on the lower surface. The labyrinth is formed by raised portions of one of the first and second uneven parts being disposed within recessed portions of the other of the first and second uneven parts with a gap therebetween only when the top plate is located at a second position (i.e., the processing space is created). This achieves flattening of the substrate processing apparatus.

Abstract: A substrate processing apparatus includes a substrate holding unit having a spin base; a blocking member having a substrate facing surface facing an upper surface of the substrate held by the substrate holding unit and having a diameter larger than the spin base; a blocking member lifting unit raising and lowering the blocking member between a blocking position where a space between the substrate facing surface and the upper surface is blocked from lateral side on the upper surface and a retreat position where the space is not blocked from the lateral side on the upper surface; guards including an inner side and an outer side guards respectively surrounding periphery of the substrate holding unit and surrounding periphery of the inner side guard. An inner circumferential end of the outer side guard is positioned on radial outer side of an inner circumferential end of the inner side guard.

Abstract: A substrate processing apparatus includes a spin chuck, rotating a disk-shaped substrate around a rotational axis while holding it horizontally, a cylindrical guard, receiving a processing liquid scattered outward from the substrate held by the spin chuck, and a centering unit, which brings a center of the substrate close to the rotational axis. The centering unit includes a pusher, contacting the substrate on the spin chuck, and a linear motor, moving the pusher horizontally to move the substrate horizontally with respect to the spin chuck. At least a portion of the linear motor is disposed above the guard such as to overlap with the guard in plan view.

Abstract: A substrate treatment apparatus is provided with a plurality of substrate treatment parts and a liquid treatment system. The substrate treatment part has a substrate retaining part, which retains a substrate, and a discharge nozzle, which discharges a treatment liquid to the substrate retained by the substrate retaining part. The liquid treatment system has: a storage tank that stores in the treatment liquid; a supply piping part that is connected to the storage tank and forms a supply passage through which the treatment liquid to be supplied to the discharge nozzle passes; a return piping part that is connected to the storage tank and forms a return passage that returns the treatment liquid passed through the supply piping part to the storage tank; and a gas supply part that supplies a nitrogen gas different from oxygen dissolved in the treatment liquid into the return passage of the return piping part.