Abstract: A method for producing a liquid crystal display includes providing a first substrate having a first electrode and a second electrode on a surface of the first substrate. The first and the second electrodes are made of conductive films. A liquid crystal aligning agent is applied to the surface of the first substrate to form an alignment film on the first substrate. The liquid crystal aligning agent includes at least one of: a polymer that includes a photoalignment structure and a polymerizable carbon-carbon double bond; a polymer that includes a photoalignment structure, and a component that includes a polymerizable carbon-carbon double bond; or a polymer that includes a photoalignment structure and a polymerizable carbon-carbon double bond, and a component that includes a polymerizable carbon-carbon double bond. The second substrate is provided to form a liquid crystal cell. Light is applied to the liquid crystal cell.

Abstract: A method for producing a liquid crystal display includes providing a first substrate having a first electrode and a second electrode on a surface of the first substrate. The first and the second electrodes are made of conductive films. A liquid crystal aligning agent is applied to the surface of the first substrate to form an alignment film on the first substrate. The liquid crystal aligning agent includes at least one of: a polymer that includes a photoalignment structure and a polymerizable carbon-carbon double bond; a polymer that includes a photoalignment structure, and a component that includes a polymerizable carbon-carbon double bond; or a polymer that includes a photoalignment structure and a polymerizable carbon-carbon double bond, and a component that includes a polymerizable carbon-carbon double bond. The second substrate is provided to form a liquid crystal cell. Light is applied to the liquid crystal cell.

Abstract: The present invention provides: a composition for forming a liquid crystal alignment film capable of forming a liquid crystal alignment film excellent in evenness; and a liquid crystal display device. The present invention provides a composition for forming a liquid crystal alignment film, wherein the composition comprises: a material for forming a liquid crystal alignment film; 4,6-dimethyl-2-heptanone; diisobutyl ketone; and at least one of ?-butyrolactone and N-methyl-2-pyrrolidone as solvents.

Abstract: There is provided a radiation sensitive refractive index changing composition containing an inorganic oxide particle, a polymerizable compound, a radiation sensitive decomposer and an escapable compound. The radiation sensitive decomposer decomposes upon exposure to radiation to form an acid, base or radical, and this decomposed product increases the molecular weight of the polymerizable compound.

Abstract: A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.

Abstract: A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by the formula (1), compounds represented by the formula (2), and compounds represented by the formula (3) in the presence of water and an ammonium compound, and (B) an organic solvent.

Abstract: An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided.

Abstract: a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1): wherein Z and Y are as defined hereinabove.

Abstract: A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly(arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

Abstract: A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.

Abstract: There is provided a radiation sensitive refractive index changing composition containing an inorganic oxide particle, a polymerizable compound, a radiation sensitive decomposer and an escapable compound. The radiation sensitive decomposer decomposes upon exposure to radiation to form an acid, base or radical, and this decomposed product increases the molecular weight of the polymerizable compound.

Abstract: A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

Abstract: Disclosed herein are a polymer for forming an organic electroluminescence device and a polymer composition for organic electroluminescence devices, by which a thin film can be formed with ease by the wet method, and an organic electroluminescence device that can achieve light emission high in luminous luminance and stable even during continuous driving can be provided, and the organic electroluminescence device.

Abstract: A composition for film formation capable of forming a silica-based coating film having low water absorption and dielectric constant of 2.1 or lower and useful as an interlayer insulating film material in semiconductor devices, etc.

Abstract: There is disclosed a radiation sensitive composition containing a silane compound represented by the following formula (1): (R1)pSi(X)4-p  (1) wherein R1 is an unhydrolyzable organic group having 1 to 12 carbon atoms, X is a hydrolyzable group, and p is an integer of 0 to 3, a hydrolyzate thereof and a condensate of the hydrolyzate; and a compound which generates an acid or base upon exposure to radiation. The composition is used to form an insulating film for an organic EL display device, and an interlayer insulating film for a liquid crystal display device.

Abstract: A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

Abstract: A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.

Abstract: There is disclosed a radiation sensitive composition containing a silane compound represented by the following formula (1):

Abstract: A method of manufacturing an insulating film-forming material comprising a curable composition comprisING (A) an inorganic polymer compound or an organic polymer compound and (B) an organic solvent, which comprises treating the curable composition with a zeta potential-producing filter material. Because the curable composition has a very small content of alkali metals and heavy metals, the composition is suitably used for the manufacture of materials for forming insulating films which have a wide variety of applications in the electronic field.

Abstract: Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a  (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c  (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or diffe