Abstract: An active matrix type flat-panel display device includes a flat substrate, a plurality of light emissive elements arranged two dimensionally along columns and lines on the flat substrate, a plurality of selection switches formed on the flat substrate, for sequentially selecting the light emissive elements to provide video signals thereto, selection signal generation circuits for providing selection signals which drive the selection switches in sequence so as to two dimensionally scan the light emissive elements, and a selection signal control circuit for preventing the selection signals from being output from the selection signal generation circuits for a predetermined period of time so as to eliminate overlap between the selection signals.

Abstract: An organic EL device of the invention includes an inorganic material layer with a resistivity of less than 20 .OMEGA.-cm disposed between an electrode and a light emitting layer. The inorganic material layer contains at least one of indium oxide, tin oxide, and zinc oxide as a primary component, which is the same material as an anode, and at least one of silicon and germanium as an auxiliary component. This improves physical properties at the electrode-organic layer interface and restrains generation of dark spots, establishing an organic EL device featuring a long life, high efficiency and low cost.

Abstract: An image display system having a plurality of light emitting cells (EL.sub.11 -EL.sub.44) each having a pair of Electro-Luminescence elements (e.sub.1, e.sub.2) coupled in parallel with each other with opposite polarities. The light emitting cells are arranged on a cross point of a matrix, which is addressed through an active addressing method in which a plurality of rows of the matrix are selected simultaneously, and alternate voltage is applied to the matrix.

Abstract: An organic EL light emitting device has a light emitting layer between a cathode and an anode. Both the cathode and the anode are light transmissive. The cathode includes a conductor layer of a metal or alloy with a work function of up to 4 eV having a thickness of up to 10 nm on the light emitting layer side, a transparent electrode of zinc-doped indium oxide on a side remote from the light emitting layer, and optionally a buffer layer between the conductor layer and the transparent electrode. Light emission can exit from the device on both the cathode and anode sides.

Abstract: The invention provides a method for preparing a silicon thin film at a high deposition rate or a silicon compound thin film having a high dielectric strength and high hardness, without causing damage to other structure films or forming flakes during film deposition. The method for preparing a silicon or silicon compound thin film involves evaporating a material by means of a high density plasma gun, and depositing a thin film of silicon or silicon compound on a substrate.

Abstract: An organic EL light emitting device with some contrast improvement is provided at low cost yet with no provision of an antireflection coating film. The device comprises a transparent substrate, and an anode, a light emitting layer and a cathode formed thereon in the described order. The anode contains indium oxide doped with tin and/or zinc, and iron in such a way as to have a light transmittance of 30 to 70% in a light emitting wavelength range.

Abstract: A pad for an interior body of a helmet includes a shaped cushion material made of foamed urethane or the like, a stretchable first cloth on one side of the cushion material for contact with a head of a user, a nonstretchable second cloth disposed on a side of the cushion material opposed to the cloth. The interior body includes a plurality of pads connected to form a band shape around the head of a user and so as not to bend in a vertical direction.

Abstract: Fabrication of TFTs utilizing self-aligned techniques. Although gate electrodes are made of aluminum, source/drain regions can be activated by a heat treatment. Spacers are formed, using dummy gate electrodes. Gate electrodes are defined, using the spacers. Impurity ions are implanted before the gate electrodes are formed. Thus, the source/drain regions, channel formation regions, and offset regions are formed in a self-alignment manner, using the dummy gate electrodes and the spacers as masks. Since the heat treatment is made before the formation of the gate electrodes, the gate electrodes can be formed from aluminum having a low melting point.

Abstract: An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective elements.

Abstract: A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.

Abstract: A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.

Abstract: The present invention provides a process and apparatus for manufacturing organic electroluminescence cell, wherein the steps after formation of a transparent electrode on a substrate plate up to formation of a protective film are successively carried out in vacuum chambers which are isolated from the oxidative external atmosphere and thereafter withdrawn from the chambers into the air. A plurarity of layer portions of at least a portion of the electroluminescence cell is formed in a plurality of woriking chambers and withdrawn to the outside after formation of a protective film thereon.

Abstract: An image display device which is not affected by image control signal for other pixels and gives adjustable intensity based upon control signal is provided. The image display device has a thin film pixel element EL, a non-linear element 5 for emit control of said thin film pixel element EL, a signal hold capacitor C coupled with a gate electrode of said non-linear element 5, another non-linear element 6 for writing data into said capacitor C, and a resistor R coupled between said capacitor C and a fixed potential source. The resistance of said resistor R is larger than ON resistance and smaller than OFF resistance of said non-linear element 6 for data writing.

Abstract: A thin-film transistor comprising an active silicon pattern which is formed of a plurality of island-like regions arranged in parallel to each other, the island-like regions being formed of a polycrystal silicon thin film and each having a plane area of 1000 .mu.m.sup.2 or less.

Abstract: There is disclosed a low-pressure CVD process which uses active gases and which provides improved uniformity of the film thickness distribution across the substrate while maintaining high throughput. At least two substrates are stacked at a given spacing inside a reaction vessel. Films are to be formed over the substrates. Annular corrective frames are mounted between the successive substrates and opposite to peripheral portions of the substrates.

Abstract: In forming a thin film transistor (TFT) having an offset structure or a lightly doped drain (LDD) structure, a blocking material having a lower etching rate than that of a material constructing a gate electrode is formed. By using the blocking material as a mask, a gate electrode material is side-etched selectively to form gate electrodes. The blocking material is processed selectively and remains in a drain region side. Also, an offset region or an LDD region is formed under the blocking material by performing an impurity ion implantation. On the other hand, after the gate electrodes are formed, a resist is added and then light exposure is performed from a source region side using a light blocking material as a mask, so that the resist remains in a drain region side of the gate electrode. Also, by implanting an impurity ion, an offset region or an LDD region is formed in the drain region side.

Abstract: An image sensor device comprising a gate electrode provided on an insulating surface, a gate insulating film provided on the gate electrode, an active region, provided on the gate insulating film, for generating a carrier upon light irradiation, and doped regions provided with the active region between the doped regions. The optical carrier generated in the active region by light irradiation to the active region flows between the doped regions as current. The light irradiation can be deleted from this current with a high sensitivity.

Abstract: A thin film transistor comprises a dielectric substrate (1), a semiconductor layer (3) of poly-crystalline silicon layer having a drain region (8), an active gate region (4, 8-0), and a source region (7) placed on said substrate (1), a drain terminal (10) and a source terminal (10A) connected to said respective regions for external connection, a gate electrode (6) coupled with a part of said gate region (4) through a dielectric layer (4A), wherein length (d) of said gate electrode (6) is shorter than the length of gate region (4 plus 8-0), so that an offset region (8-0), where no gate electrode faces with said gate region, is produced.

Abstract: A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.

Abstract: An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective elements.